Prototyping and characterization of radiation hardened SiC MOS structures

2019 ◽  
Author(s):  
Francesco Pintacuda ◽  
Vincenzo Cantarella ◽  
Michele Muschitiello ◽  
Silvia Massetti
Keyword(s):  
Radiation Hardened ◽  
Mos Structures

Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices

2000 ◽  
Vol 639 ◽  
Author(s):  
D. Mistele ◽  
T. Rotter ◽  
R. Ferretti ◽  
F. Fedler ◽  
H. Klausing ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Photoelectrochemical Cell ◽  
Oxide Growth ◽  
Metal Source ◽  
Device Applications ◽  
Small Density ◽  
Wet Chemical ◽  
Mos Structures ◽  
Strong Depletion

ABSTRACTPhotoanodically grown Ga2O3 layers were characterized with respect to their suitability as gate dielectrics for GaN based MOSFET Device applications. The Ga2O3 layers were produced in a photoelectrochemical cell using aqueous solutions of KOH. IV characterization of MOS structures show insulating behavior of the oxide layers and CV measurements indicate a small density of states at the oxide/GaN interface. Integrating the wet chemical oxide growth in a MOSFET device fabricating process includes tungsten as gate metal together with H2O2 as etching solution for the gate metal. Source/drain areas were made free of oxide by the alkaline developer of a conventional lithographic step and metallization was done by using the liftoff technique. MOS structures show no inversion mode but strong depletion in reverse biasing mode.

Characterization of radiation hardened fibers in a research grade nuclear reactor

2021 ◽  
Author(s):  
Garry Berkovic ◽  
Shlomi Zilberman ◽  
Ehud Shafir ◽  
Yosef London ◽  
M. Dadon ◽  
...  
Keyword(s):  
Nuclear Reactor ◽  
Radiation Hardened ◽  
Research Grade

Characterization of new radiation hardened bipolar operational amplifiers

2009 ◽  
Author(s):  
Geraldine Chaumont ◽  
Benoit Cornanguer ◽  
Patrick Briand ◽  
Christophe Prugne ◽  
Florence Malou
Keyword(s):  
Operational Amplifiers ◽  
Radiation Hardened

Interface characterization of InSb MOS structures

1982 ◽  
Vol 89 (4) ◽  
pp. 401-406 ◽  
Author(s):  
Y. Shapira ◽  
J. Bregman ◽  
Z. Calahorra ◽  
R. Goshen
Keyword(s):  
Interface Characterization ◽  
Mos Structures

Characterization of interface states at Au/SnO2/n-Si (MOS) structures

Vacuum ◽  
2008 ◽  
Vol 82 (11) ◽  
pp. 1203-1207 ◽  
Author(s):  
A. Tataroğlu ◽  
Ş. Altındal
Keyword(s):  
Interface States ◽  
Mos Structures

Freeze-out characterization of radiation hardened N/sup +/ polysilicon gate CMOS transistors

1991 ◽  
Vol 38 (6) ◽  
pp. 1289-1296 ◽  
Author(s):  
D.C. Pantelakis ◽  
D.F. Hemmenway ◽  
N.W. van Vonno ◽  
T.J. Sanders
Keyword(s):  
Cmos Transistors ◽  
Polysilicon Gate ◽  
Radiation Hardened ◽  
Freeze Out
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