Effects of switched gate bias on radiation-induced interface trap formation (MOS transistors)

1991 ◽  
Vol 38 (6) ◽  
pp. 1130-1139 ◽  
Author(s):  
N.S. Saks ◽  
D.B. Brown ◽  
R.W. Rendell
Keyword(s):  
Interface Trap ◽  
Gate Bias ◽  
Mos Transistors ◽  
Trap Formation ◽  
Radiation Induced

The Effects of Proton-Defect Interactions on Radiation-Induced Interface-Trap Formation and Annealing

2012 ◽  
Vol 59 (6) ◽  
pp. 3087-3092 ◽  
Author(s):  
D. R. Hughart ◽  
R. D. Schrimpf ◽  
D. M. Fleetwood ◽  
N. L. Rowsey ◽  
M. E. Law ◽  
...  
Keyword(s):  
Interface Trap ◽  
Trap Formation ◽  
Radiation Induced ◽  
Defect Interactions ◽  
Proton Defect

Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors

1991 ◽  
Vol 38 (8) ◽  
pp. 1820-1831 ◽  
Author(s):  
G. Van den bosch ◽  
G.V. Groeseneken ◽  
P. Heremans ◽  
H.E. Maes
Keyword(s):  
Interface Trap ◽  
Mos Transistors ◽  
Charge Pumping

Physical model for enhanced interface-trap formation at low dose rates

2002 ◽  
Vol 49 (6) ◽  
pp. 2650-2655 ◽  
Author(s):  
S.N. Rashkeev ◽  
C.R. Cirba ◽  
D.M. Fleetwood ◽  
R.D. Schrimpf ◽  
S.C. Witczak ◽  
...  
Keyword(s):  
Physical Model ◽  
Low Dose ◽  
Interface Trap ◽  
Dose Rates ◽  
Trap Formation

A Radiation-Induced Instability in Silicon MOS Transistors

1966 ◽  
Vol 13 (6) ◽  
pp. 273-281 ◽  
Author(s):  
W. J. Dennehy ◽  
G. J. Brucker ◽  
A. G. Holmes-Siedle
Keyword(s):  
Mos Transistors ◽  
Radiation Induced

Dose and energy dependence of interface trap formation in cobalt-60 and X-ray environments

1988 ◽  
Vol 35 (6) ◽  
pp. 1260-1264 ◽  
Author(s):  
J.M. Benedetto ◽  
H.E. Boesch ◽  
F.B. McLean
Keyword(s):  
Energy Dependence ◽  
Interface Trap ◽  
X Ray ◽  
Trap Formation

Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs

2012 ◽  
Vol 59 (6) ◽  
pp. 3062-3068 ◽  
Author(s):  
E. X. Zhang ◽  
D. M. Fleetwood ◽  
G. X. Duan ◽  
C. X. Zhang ◽  
S. A. Francis ◽  
...  
Keyword(s):  
Trap Density ◽  
Floating Body ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Charge Pumping ◽  
Radiation Induced

On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors

1994 ◽  
Vol 41 (3) ◽  
pp. 413-419 ◽  
Author(s):  
R. Bellens ◽  
E. de Schrijver ◽  
G. Van den Bosch ◽  
G. Groeseneken ◽  
P. Heremans ◽  
...  
Keyword(s):  
Interface Trap ◽  
Mos Transistors ◽  
Hot Carrier ◽  
Post Stress
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