On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors

1994 ◽  
Vol 41 (3) ◽  
pp. 413-419 ◽  
Author(s):  
R. Bellens ◽  
E. de Schrijver ◽  
G. Van den Bosch ◽  
G. Groeseneken ◽  
P. Heremans ◽  
...  
Keyword(s):  
Interface Trap ◽  
Mos Transistors ◽  
Hot Carrier ◽  
Post Stress

scholarly journals On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

2000 ◽  
Vol 21 (1) ◽  
pp. 24-26 ◽  
Author(s):  
Zhi Chen ◽  
Karl Hess ◽  
Jinju Lee ◽  
J.W. Lyding ◽  
E. Rosenbaum ◽  
...  
Keyword(s):  
Interface Trap ◽  
Mos Transistors ◽  
Hot Carrier

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

2018 ◽  
Vol 33 (12) ◽  
pp. 125019
Author(s):  
Yen-Lin Tsai ◽  
Jone F Chen ◽  
Shang-Feng Shen ◽  
Hao-Tang Hsu ◽  
Chia-Yu Kao ◽  
...  
Keyword(s):  
High Voltage ◽  
Drift Region ◽  
Mos Transistors ◽  
Hot Carrier
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