Correlation between preirradiation channel mobility and radiation‐induced interface‐trap charge in metal‐oxide‐semiconductor transistors

1991 ◽  
Vol 58 (24) ◽  
pp. 2782-2784 ◽  
Author(s):  
John H. Scofield ◽  
M. Trawick ◽  
P. Klimecky ◽  
D. M. Fleetwood
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Trap Charge ◽  
Channel Mobility ◽  
Radiation Induced

scholarly journals Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

2014 ◽  
Vol 104 (13) ◽  
pp. 131605 ◽  
Author(s):  
Thenappan Chidambaram ◽  
Dmitry Veksler ◽  
Shailesh Madisetti ◽  
Andrew Greene ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Hall Method

GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

2009 ◽  
Vol 105 (11) ◽  
pp. 114510 ◽  
Author(s):  
A. Pérez-Tomás ◽  
M. Placidi ◽  
X. Perpiñà ◽  
A. Constant ◽  
P. Godignon ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mobility Modeling ◽  
Channel Mobility ◽  
Inversion Channel ◽  
Effect Transistor
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