Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field

1991 ◽  
Vol 70 (7) ◽  
pp. 3734-3747 ◽  
Author(s):  
D. B. Brown ◽  
N. S. Saks
Keyword(s):  
Metal Oxide ◽  
Time Dependence ◽  
Applied Field ◽  
Semiconductor Devices ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Trap Formation ◽  
Radiation Induced

In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

2019 ◽  
Vol 11 (4) ◽  
pp. 431-439 ◽  
Author(s):  
Rama Kambhampati ◽  
Sergei Koveshnikov ◽  
Vadim Tokranov ◽  
M. Yakimov ◽  
R Moore ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Gate Stack ◽  
In Situ Deposition ◽  
High K
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