Characterization of the transient behavior of a GaAs MESFET using dynamic I-V and S-parameter measurements

1996 ◽  
Vol 45 (1) ◽  
pp. 231-237 ◽  
Author(s):  
M. Begin ◽  
F.M. Ghannouchi ◽  
F. Beauregard ◽  
L. Selmi ◽  
B. Ricco
Keyword(s):  
Transient Behavior ◽  
Gaas Mesfet ◽  
S Parameter

scholarly journals Single Step 2-Port Device De-Embedding Algorithm for Fixture-DUT-Fixture Network Assembly

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1275
Author(s):  
Simone Scafati ◽  
Enza Pellegrino ◽  
Francesco de Paulis ◽  
Carlo Olivieri ◽  
James Drewniak ◽  
...  
Keyword(s):  
Standard Technique ◽  
Single Step ◽  
Scattering Parameters ◽  
Linear Set ◽  
S Parameter ◽  
Parameter Conversion ◽  
Before And After ◽  
One Step ◽  
Typical Measurement

The de-embedding of measurement fixtures is relevant for an accurate experimental characterization of radio frequency and digital electronic devices. The standard technique consists in removing the effects of the measurement fixtures by the calculation of the transfer scattering parameters (T-parameters) from the available measured (or simulated) global scattering parameters (S-parameters). The standard de-embedding is achieved by a multiple steps process, involving the S-to-T and subsequent T-to-S parameter conversion. In a typical measurement setup, two fixtures are usually placed before and after the device under test (DUT) allowing the connection of the device to the calibrated vector network analyzer coaxial ports. An alternative method is proposed in this paper: it is based on the newly developed multi-network cascading algorithm. The matrices involved in the fixture-DUT-fixture cascading gives rise to a non-linear set of equations that is in one step analytically solved in closed form, obtaining a unique solution. The method is shown to be effective and at least as accurate as the standard multi-step de-embedding one.

scholarly journals (M,β)-Stability of Positive Linear Systems

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
Octavian Pastravanu ◽  
Mihaela-Hanako Matcovschi
Keyword(s):  
Linear System ◽  
Linear Systems ◽  
Transient Behavior ◽  
Short Term ◽  
Time Dynamics ◽  
The Right ◽  
Long Term Behavior ◽  
Stability Concept

The main purpose of this work is to show that the Perron-Frobenius eigenstructure of a positive linear system is involved not only in the characterization of long-term behavior (for which well-known results are available) but also in the characterization of short-term or transient behavior. We address the analysis of the short-term behavior by the help of the “(M,β)-stability” concept introduced in literature for general classes of dynamics. Our paper exploits this concept relative to Hölder vectorp-norms,1≤p≤∞, adequately weighted by scaling operators, focusing on positive linear systems. Given an asymptotically stable positive linear system, for each1≤p≤∞, we prove the existence of a scaling operator (built from the right and left Perron-Frobenius eigenvectors, with concrete expressions depending onp) that ensures the best possible values for the parametersMandβ, corresponding to an “ideal” short-term (transient) behavior. We provide results that cover both discrete- and continuous-time dynamics. Our analysis also captures the differences between the cases where the system dynamics is defined by matrices irreducible and reducible, respectively. The theoretical developments are applied to the practical study of the short-term behavior for two positive linear systems already discussed in literature by other authors.

Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain

2009 ◽  
Vol 49 (12) ◽  
pp. 1424-1432 ◽  
Author(s):  
Jean-Robert Manouvrier ◽  
Pascal Fonteneau ◽  
Charles-Alexandre Legrand ◽  
Pascal Nouet ◽  
Florence Azaïs
Keyword(s):  
Time Domain ◽  
Transient Behavior

Characterization of Device Isolation in GaAs MESFET Circuits by Boron Implantation

1987 ◽  
Vol 134 (3) ◽  
pp. 711-714 ◽  
Author(s):  
F. Clauwaert ◽  
P. Van Daele ◽  
R. Baets ◽  
P. Lagasse
Keyword(s):  
Gaas Mesfet ◽  
Boron Implantation

Characterization of thermal and frequency-dispersion effects in GaAs MESFET devices

2001 ◽  
Vol 49 (7) ◽  
pp. 1352-1355 ◽  
Author(s):  
J. Rodriguez-Tellez ◽  
T. Fernandez ◽  
A. Mediavilla ◽  
A. Tazon
Keyword(s):  
Frequency Dispersion ◽  
Gaas Mesfet ◽  
Dispersion Effects
Sign in / Sign up

Export Citation Format

Share Document