Characterization of thermal and frequency-dispersion effects in GaAs MESFET devices

2001 ◽  
Vol 49 (7) ◽  
pp. 1352-1355 ◽  
Author(s):  
J. Rodriguez-Tellez ◽  
T. Fernandez ◽  
A. Mediavilla ◽  
A. Tazon
Keyword(s):  
Frequency Dispersion ◽  
Gaas Mesfet ◽  
Dispersion Effects

Characterization of the frequency dispersion of transconductance and drain conductance of GaAs MESFET

2003 ◽  
Vol 50 (10) ◽  
pp. 2032-2038 ◽  
Author(s):  
Y. Hasumi ◽  
N. Matsunaga ◽  
T. Oshima ◽  
H. Kodera
Keyword(s):  
Frequency Dispersion ◽  
Gaas Mesfet ◽  
Drain Conductance

Bulgarian tsunami on 7 May 2007: numerical investigation of the hypothesis of a submarine-landslide origin

2018 ◽  
Vol 477 (1) ◽  
pp. 303-313 ◽  
Author(s):  
Oleg I. Gusev ◽  
Gayaz S. Khakimzyanov ◽  
Leonid B. Chubarov
Keyword(s):  
Black Sea ◽  
Water Resistance ◽  
Tsunami Wave ◽  
Deformable Body ◽  
Frequency Dispersion ◽  
Submarine Landslide ◽  
Generation Process ◽  
Tsunami Waves ◽  
Dispersion Effects ◽  
Dispersive Model

AbstractWe investigate the ability of a submarine landslide to generate the tsunami waves observed on the Bulgarian coast of Black Sea on 7 May 2007. In our simulations, a landslide is presented as a quasi-deformable body moving along a curvilinear slope under action of the forces of gravity, buoyancy, water resistance and bottom friction. We employ the fully non-linear weakly dispersive model for tsunami wave simulations. The computations show that the initial landslide position on the real slope is extremely important for its dynamics and the wave generation process. We constructed some model landslides which generated similar waves to those observed. Moreover, these landslides stopped in the same region. Finally, we evaluated the significance of the frequency dispersion effects in the simulations.

Overcoming energy spreading loss (ESL) for characterization of broadband frequency dispersion

1996 ◽  
Vol 100 (4) ◽  
pp. 2703-2703
Author(s):  
J. Paquin Fabre ◽  
James H. Wilson ◽  
Jack G. McDermid
Keyword(s):  
Frequency Dispersion ◽  
Broadband Frequency

Characterization of Device Isolation in GaAs MESFET Circuits by Boron Implantation

1987 ◽  
Vol 134 (3) ◽  
pp. 711-714 ◽  
Author(s):  
F. Clauwaert ◽  
P. Van Daele ◽  
R. Baets ◽  
P. Lagasse
Keyword(s):  
Gaas Mesfet ◽  
Boron Implantation
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