Characterization of Device Isolation in GaAs MESFET Circuits by Boron Implantation

1987 ◽  
Vol 134 (3) ◽  
pp. 711-714 ◽  
Author(s):  
F. Clauwaert ◽  
P. Van Daele ◽  
R. Baets ◽  
P. Lagasse
Keyword(s):  
Gaas Mesfet ◽  
Boron Implantation

DLTS Characterization of N-Type Silicon After Rapid Thermal Annealing of Boron Implantation

1985 ◽  
Vol 52 ◽  
Author(s):  
C. M. Ransom ◽  
T. O. Sedgwick ◽  
S. A. Cohen
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diode ◽  
Electron Traps ◽  
Majority Carrier ◽  
Type Silicon ◽  
Isochronal Anneal ◽  
Boron Implantation ◽  
Carrier Traps

ABSTRACTDLTS measurements show that majority-carrier traps exist after quartz-lamp, rapid-thermal annealing (RTA) activation of B+ and BF2+ ion implants in n-type silicon. Levels at Ec-0.17, 0.27, 0.44 and 0.57 eV annealed out with an additional 20 minute isochronal anneal at 550°C in argon. A stable defect at 0.37 eV existed at temperatures above 750°C. DLTS measurements of a Schottky diode on n-type silicon after only RTA indicated that electron traps could be introduced into n-type silicon by the RTA alone.

Characterization of thermal and frequency-dispersion effects in GaAs MESFET devices

2001 ◽  
Vol 49 (7) ◽  
pp. 1352-1355 ◽  
Author(s):  
J. Rodriguez-Tellez ◽  
T. Fernandez ◽  
A. Mediavilla ◽  
A. Tazon
Keyword(s):  
Frequency Dispersion ◽  
Gaas Mesfet ◽  
Dispersion Effects

Characterization of the transient behavior of a GaAs MESFET using dynamic I-V and S-parameter measurements

1996 ◽  
Vol 45 (1) ◽  
pp. 231-237 ◽  
Author(s):  
M. Begin ◽  
F.M. Ghannouchi ◽  
F. Beauregard ◽  
L. Selmi ◽  
B. Ricco
Keyword(s):  
Transient Behavior ◽  
Gaas Mesfet ◽  
S Parameter

Metal Contacts to Boron-Doped Diamond

2009 ◽  
Vol 615-617 ◽  
pp. 995-998
Author(s):  
Michal Lodzinski ◽  
Owen J. Guy ◽  
A. Castaing ◽  
S. Batcup ◽  
S.P. Wilks ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electrical Performance ◽  
Metal Contacts ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Current Voltage ◽  
Specific Contact ◽  
Boron Implantation ◽  
Post Deposition

This paper describes the fabrication of Ni and Ti contacts to single crystal, boron-doped diamond. The electrical performance of metal-diamond contacts has been investigated using current-voltage I(V) characterization of circular transmission line model (CTLM) test structures. X-ray photoelectron spectroscopy (XPS) analysis of Ti/diamond contacts has been performed and is correlated with CTLM results. Post deposition annealing of metal-diamond contacts has a dramatic influence on contact resistivity, with lower resistances observed after annealing at 900°C. Specific contact resistances as low as 9 x 10-5 Ω.cm2 have been obtained. The effect of doping (via epitaxial growth and boron implantation) on metal-diamond contacts is also reported.

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