AlGaAs/InGaAs heterostructure doped-channel FET's exhibiting good electrical performance at high temperatures

2001 ◽  
Vol 48 (10) ◽  
pp. 2210-2215 ◽  
Author(s):  
Hsien-Chin Chiu ◽  
Shih-Cheng Yang ◽  
Yi-Jen Chan
Keyword(s):  
High Temperatures ◽  
Electrical Performance ◽  
Good Electrical Performance

Application of PDC Analysis to Identify Effect of Electrical Tracking on Conductivity of LLDPE-NR Nanocomposite

2015 ◽  
Vol 785 ◽  
pp. 325-329
Author(s):  
N.A.M. Jamail ◽  
M.A.M. Piah ◽  
Nor Asiah Muhamad ◽  
Hanafiah Kamarden ◽  
Qamarul Ezani Kamarudin
Keyword(s):  
Electrical Performance ◽  
Low Density Polyethylene ◽  
Linear Low Density Polyethylene ◽  
Polymeric Nanocomposites ◽  
Depolarization Current ◽  
Physical Conditions ◽  
Measurement Results ◽  
Polymeric Insulators ◽  
Base Polymer ◽  
Good Electrical Performance

Polymeric nanocomposites are widely used for high voltage outdoor insulating application due to their good electrical performance. Recently, SiO2, TiO2 and MMT nanofillers are being used as filler because there are listed as main nanofiller commonly used in electrical engineering. Natural rubber (NR) was used because the nature of the interphase is found to affect viscoelasticity and it develops several interphases with the Linear Low-Density Polyethylene (LLDPE) matrix. One of the problems associated with outdoor polymeric insulators is tracking of the surface which can directly influence the reliability of the insulator. This paper presents the outcome of an experimental study to determine the conductivity level of the LLDPE-NR compound, filled with different amount of SiO2, TiO2 and MMT nanofiller using Polarization and Depolarization Current (PDC) measurement technique. LLDPE and NR with the ratio composition of 80:20 were selected as a base polymer. Results show that different compositions as well as the surface physical conditions affect the PDC measurement results.

scholarly journals A Tunable Filter with Different Kinds of Material for Good Electrical Performance

2020 ◽  
Vol 1486 ◽  
pp. 062007
Author(s):  
Chang Zhou ◽  
Jing Xia ◽  
Wanwan Jin ◽  
Li Wang ◽  
Gang Liu ◽  
...  
Keyword(s):  
Tunable Filter ◽  
Electrical Performance ◽  
Good Electrical Performance

TEM assessment of GaN/AlGaN/TiAlTiAu and GaN/AlGaN/TiAlPdAu ohmic contacts

2001 ◽  
Vol 693 ◽  
Author(s):  
M W Fay ◽  
G Moldovan ◽  
I Harrison ◽  
J C Birbeck ◽  
B T Hughes ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
High Temperatures ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Structural Evolution ◽  
Electrical Performance ◽  
Diffusion Front ◽  
Tem Analysis ◽  
Inclusion Formation

AbstractTiAlTiAu and TiAlPdAu contacts to GaN/AlGaN, rapid thermal annealed at temperatures ranging from 650°C to 950°C, have been investigated using conventional and chemical TEM analysis. Ohmic behaviour was seen for TiAlTiAu contacts annealed at 750°C or higher, but was not observed in TiAlPdAu contacts annealed at up to 950°C. The effect of annealing temperature on the structural evolution of the contact is explained in terms of different extents of interfacial reaction. In particular, the formation of TiN after anneals at high temperatures is required to activate the contact. At anneals of 950°C, TiAlTiAu samples show a structure of TiN grains within an interfacial band, with TiN inclusions into the AlGaN preceded by an Al-Au diffusion front. Inclusion formation and the effect on the contact electrical performance is described.

Multilevel Interconnection Technologies and Future Requirements for Logic Applications

1998 ◽  
Vol 514 ◽  
Author(s):  
M. Brillouët
Keyword(s):  
Electrical Performance ◽  
New Materials ◽  
Trade Offs ◽  
Integration Density ◽  
A Priority ◽  
Low K ◽  
Interconnect Material ◽  
Good Electrical Performance

ABSTRACTThe performance and cost of the logic ICs is more and more dominated by the interconnections. Reducing the capacitances in the advanced processes, especially with low k dielectrics, is a priority, while a differentiated approach can be applied for lowering the connection resistances, e.g. in adapting the interconnect material to specific levels. Integrating new materials leads to difficult trade-offs in order to achieve a good electrical performance of the circuit. Finally the increased number of levels of interconnection addresses other fields like integration density, defectivity reduction or cost.

Multiple Through-Wafer Interconnects for Stacking of Microsystems

1999 ◽  
Author(s):  
Matthias Heschel ◽  
Kurt Rasmussen ◽  
Jochen F. Kuhmann ◽  
Siebe Bouwstra
Keyword(s):  
Integrated Circuit ◽  
Adhesive Bonding ◽  
Series Resistance ◽  
Hearing Aid ◽  
Conductive Adhesive ◽  
Electrical Performance ◽  
Signal Conditioning ◽  
Novel Technology ◽  
Solder Bumps ◽  
Good Electrical Performance

Abstract This paper describes a novel technology for multiple wafer frontside to backside interconnects, which has been applied to a multifunctional interconnect layer for an integrated microphone for hearing aid applications. Besides the interconnect layer with relatively large through-holes the stack consists of the microphone itself and an integrated circuit chip for signal conditioning. The patterning of the metallization on the interconnect wafer has been done using electrodepositable photoresist as mold for electroplating of a variety of metals. For the interconnect metallization we use copper. The bonding pads on the microphone side of the interconnect layer have been provided with under bump metallizations (UBM) and solder bumps. The IC side features a top surface metallization (TSM) suitable for conductive adhesive bonding. The realized feedthrough wires show good electrical performance in terms of low series resistance (100 mΩ) and small parasitic capacitance (< 1 pF).

Large Area, Rubber Stamped Plastic Circuits for Electronic Paper

2000 ◽  
Vol 660 ◽  
Author(s):  
John A. Rogers ◽  
Kirk Baldwin ◽  
Zhenan Bao ◽  
Ananth Dodabalapur ◽  
V.R. Raju ◽  
...  
Keyword(s):  
High Resolution ◽  
Microcontact Printing ◽  
Area Coverage ◽  
Electrical Performance ◽  
Large Area ◽  
Active Matrix ◽  
Plastic Electronics ◽  
Electronic Paper ◽  
Good Electrical Performance

ABSTRACTThis paper illustrates the use of a high resolution form of rubber stamping, known as microcontact printing (μCP), for patterning plastic active matrix drive circuitry designed for electronic paper. The high resolution (∼1 [.mu]m) of the printed elements, the large area coverage (∼1 sq. ft.) and the good electrical performance of these systems suggest that the methods, materials and processing sequences may be attractive for realistic applications of plastic electronics.

In situ REM imaging of surface processes on ceramic bulk crystals from 300 to 1670 K in a conventional TEM

1991 ◽  
Vol 49 ◽  
pp. 660-661
Author(s):  
Z. L. Wang ◽  
J. Bentley
Keyword(s):  
High Temperatures ◽  
Image Resolution ◽  
Atomic Processes ◽  
Crystal Surfaces ◽  
Beam Radiation ◽  
Surface Areas ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Gas Reactions

Studying the behavior of surfaces at high temperatures is of great importance for understanding the properties of ceramics and associated surface-gas reactions. Atomic processes occurring on bulk crystal surfaces at high temperatures can be recorded by reflection electron microscopy (REM) in a conventional transmission electron microscope (TEM) with relatively high resolution, because REM is especially sensitive to atomic-height steps.Improved REM image resolution with a FEG: Cleaved surfaces of a-alumina (012) exhibit atomic flatness with steps of height about 5 Å, determined by reference to a screw (or near screw) dislocation with a presumed Burgers vector of b = (1/3)<012> (see Fig. 1). Steps of heights less than about 0.8 Å can be clearly resolved only with a field emission gun (FEG) (Fig. 2). The small steps are formed by the surface oscillating between the closely packed O and Al stacking layers. The bands of dark contrast (Fig. 2b) are the result of beam radiation damage to surface areas initially terminated with O ions.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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