Multilevel Interconnection Technologies and Future Requirements for Logic Applications

1998 ◽  
Vol 514 ◽  
Author(s):  
M. Brillouët
Keyword(s):  
Electrical Performance ◽  
New Materials ◽  
Trade Offs ◽  
Integration Density ◽  
A Priority ◽  
Low K ◽  
Interconnect Material ◽  
Good Electrical Performance

ABSTRACTThe performance and cost of the logic ICs is more and more dominated by the interconnections. Reducing the capacitances in the advanced processes, especially with low k dielectrics, is a priority, while a differentiated approach can be applied for lowering the connection resistances, e.g. in adapting the interconnect material to specific levels. Integrating new materials leads to difficult trade-offs in order to achieve a good electrical performance of the circuit. Finally the increased number of levels of interconnection addresses other fields like integration density, defectivity reduction or cost.

The Provenance Problem: Research Methods and Ethics in the Age of WikiLeaks

2021 ◽  
pp. 1-16
Author(s):  
CHRISTOPHER DARNTON
Keyword(s):  
Big Data ◽  
Research Methods ◽  
New Materials ◽  
Research Strategies ◽  
Trade Offs ◽  
Research Designs ◽  
Leading Journals

How should political scientists navigate the ethical and methodological quandaries associated with analyzing leaked classified documents and other nonconsensually acquired sources? Massive unauthorized disclosures may excite qualitative scholars with policy revelations and quantitative researchers with big-data suitability, but they are fraught with dilemmas that the discipline has yet to resolve. This paper critiques underspecified research designs and opaque references in the proliferation of scholarship with leaked materials, as well as incomplete and inconsistent guidance from leading journals. It identifies provenance as the primary concept for improved standards and reviews other disciplines’ approaches to this problem. It elaborates eight normative and evidentiary criteria for scholars by which to assess source legitimacy and four recommendations for balancing their trade-offs. Fundamentally, it contends that scholars need deeper reflection on source provenance and its consequences, more humility about whether to access new materials and what inferences to draw, and more transparency in citation and research strategies.

A Heterogeneous Array of Off-Chip Interconnects for Optimum Mechanical and Electrical Performance

2007 ◽  
Vol 129 (4) ◽  
pp. 460-468 ◽  
Author(s):  
Karan Kacker ◽  
Thomas Sokol ◽  
Wansuk Yun ◽  
Madhavan Swaminathan ◽  
Suresh K. Sitaraman
Keyword(s):  
Flip Chip ◽  
Dielectric Material ◽  
Coefficient Of Thermal Expansion ◽  
Semiconductor Industry ◽  
Organic Substrate ◽  
Electrical Performance ◽  
Integrative Approach ◽  
Wafer Level ◽  
Target Values ◽  
Low K

Demand for off-chip bandwidth has continued to increase. It is projected by the Semiconductor Industry Association in their International Technology Roadmap for Semiconductors that by the year 2015, the chip-to-substrate area-array input-output interconnects will require a pitch of 80 μm. Compliant off-chip interconnects show great potential to address these needs. G-Helix is a lithography-based electroplated compliant interconnect that can be fabricated at the wafer level. G-Helix interconnects exhibit excellent compliance in all three orthogonal directions, and can accommodate the coefficient of thermal expansion (CTE) mismatch between the silicon die and the organic substrate without requiring an underfill. Also, these compliant interconnects are less likely to crack or delaminate the low-k dielectric material in current and future integrated circuits. The interconnects are potentially cost effective because they can be fabricated in batch at the wafer level and using conventional wafer fabrication infrastructure. In this paper, we present an integrative approach, which uses interconnects with varying compliance and thus varying electrical performance from the center to the edge of the die. Using such a varying geometry from the center to the edge of the die, the system performance can be tailored by balancing electrical requirements against thermomechanical reliability concerns. The test vehicle design to assess the reliability and electrical performance of the interconnects is also presented. Preliminary fabrication results for the integrative approach are presented and show the viability of the fabrication procedure. The results from reliability experiments of helix interconnects assembled on an organic substrate are also presented. Initial results from the thermal cycling experiments are promising. Results from mechanical characterization experiments are also presented and show that the out-of-plane compliance exceeds target values recommended by industry experts. Finally, through finite element analysis simulations, it is demonstrated that the die stresses induced by the compliant interconnects are an order of magnitude lower than the die stresses in flip chip on board (FCOB) assemblies, and hence the compliant interconnects are not likely to crack or delaminate low-k dielectric material.

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

MRS Bulletin ◽  
2009 ◽  
Vol 34 (7) ◽  
pp. 485-492 ◽  
Author(s):  
M. Heyns ◽  
W. Tsai
Keyword(s):  
Metal Oxide ◽  
High Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
New Materials ◽  
New Device ◽  
Technology Node ◽  
High Mobility Channel ◽  
Technology Nodes

AbstractOver the years, many new materials have been introduced in advanced complementary metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the gate length and increasing the performance of CMOS devices. This is clearly evidenced in the International Technology Roadmap for Semiconductors (ITRS), which indicates the requirements and technological challenges in the microelectronics industry in various technology nodes. Every new technology node, characterized by the minimal device dimensions that are used, has required innovations in new materials and transistor design. The introduction of deposited high-κ gate dielectrics and metal gates as replacements for the thermally grown SiO2 and poly-Si electrode was a major challenge that has been met in the transition toward the 32 nm technology node since it replaced the heart of the metal oxide semiconductor structure. For the next generation of technology nodes, even bigger hurdles will need to be overcome, since new device structures and high-mobility channel materials such as Ge and III–V compounds might be needed, according to the ITRS roadmap, to meet the power and performance specifications of the 16 nm CMOS node and beyond. The basic properties of these high-mobility channel materials and their impact on the device performance have to be fully understood to allow process integration and full-scale manufacturing. In addition to thermal stability, compatibility with other materials, electronic transport properties, and especially the passivation of electronically active defects at the interface with a high-κ dielectric, are enormous challenges. Many encouraging results have been obtained, but the stringent demands in terms of electrical performance and oxide thickness scaling needed for highly scaled CMOS devices are not yet fully met. Other areas where breakthroughs will be needed are the formation of low-resistivity contacts, especially on III–V materials, and III–V materials suited for pMOS channels. An overview of the major successes and remaining critical issues in the materials research on high-mobility channel materials for advanced CMOS devices is given in this issue of MRS Bulletin.

Underfill Assessments and Validations for Low-k FCBGA

2006 ◽  
Author(s):  
Nicholas Kao ◽  
Jeng Yuan Lai ◽  
Jase Jiang ◽  
Yu Po Wang ◽  
C. S. Hsiao
Keyword(s):  
Finite Element ◽  
High Speed ◽  
Flip Chip ◽  
Failure Modes ◽  
Solder Bump ◽  
Material Selection ◽  
Coefficient Of Thermal Expansion ◽  
Electrical Performance ◽  
Low K ◽  
Underfill Material

With the trend of electronic consumer product toward more functionality, high performance and miniaturization, IC chip is required to deliver more I/Os signals and better electrical characteristics under same package form factor. Thus, Flip Chip BGA (FCBGA) package was developed to meet those requirements offering better electrical performance, more I/O pins accommodation and high transmission speed. For high-speed application, the low dielectric constant (low-k) material that can effectively reduce the signal delays is extensively used in IC chips. However, the low-k material possesses fragile mechanical property and high coefficient of thermal expansion (CTE) compared with silicon chip, which raises the reliability concerns of low-k material integrated into IC chip. The typical reliability failure modes are low-k layer delamination and bump crack under temperature loading during assembly and reliability test. Delamination is occurred in the interface between low-k dielectric layers and underfill material at chip corner. Bump crack is at Under Bump Metallization (UBM) corner. Thus, the adequate underfill material selection becomes very important for both solder bump and low-k chips [1]. This paper mainly characterized FCBGA underfill materials to guide the adequate candidates to prevent failures on low-k chip and solder bump. Firstly, test vehicle was a FCBGA package with heat spreader and was investigated the thermal stress by finite element models. In order to analyze localized low-k structures, sub-modeling technique is used for underfill characterizations. Then, the proper underfill candidates picked from modeling results were experimentally validated by reliability tests. Finally, various low-k FCBGA package structures were also studied with same finite element technique.

Study of Warpage and Mechanical Stress of 2.5D Package Interposers during Chip and Interposer Mount Process

2012 ◽  
Vol 2012 (1) ◽  
pp. 000967-000974 ◽  
Author(s):  
Takashi Hisada ◽  
Yasuharu Yamada ◽  
Junko Asai ◽  
Toyohiro Aoki
Keyword(s):  
Mechanical Stress ◽  
Dielectric Layer ◽  
Coefficient Of Thermal Expansion ◽  
Transmission Rate ◽  
Organic Substrate ◽  
Electrical Performance ◽  
Von Mises Stress ◽  
Design Elements ◽  
Plastic Ball ◽  
Low K

As data transmission rate increases, flip chip plastic ball grid array (FCPBGA) utilizing a interposer for multiple chips is gaining popularity because of high electrical performance, ease of chip design, ease of thermal management with thermal lid, etc. The authors assessed package design configuration and key design elements for two chips application assuming 1600 signal I/Os for logic and 800 signal I/Os for memory. Then, we studied warpage behavior of the interposer, and mechanical stress of solder interconnections and low-k dielectric layer under controlled collapse chip connection (C4) pad. We set three different mount process assumptions for chip to interposer and interposer to base organic substrate. The mount process assumptions are (1) two pass reflow of chip to interposer first, then interposer to base organic substrate, (2) reversed sequence of two pass reflow which is interposer to base organic substrate first, then chip to interposer, (3) one pass reflow of chip, interposer and base organic substrate all together. We also set three different interposer material assumptions of Si, glass and organic in this study. We analyzed warpage behavior and mechanical stress using finite element method (FEM) modeling technique with a set of combinations of coefficient of thermal expansion (CTE) and elastic modulus of the interposers. The study also includes an analysis for conventional multi-chip-module (MCM) FCPBGA as a reference. We show the analysis results of interposer warpage, first principal stress at low-k dielectric layer under C4 pad and von Mises stress at solder interconnections of chip joining and interposer joining.

Application of PDC Analysis to Identify Effect of Electrical Tracking on Conductivity of LLDPE-NR Nanocomposite

2015 ◽  
Vol 785 ◽  
pp. 325-329
Author(s):  
N.A.M. Jamail ◽  
M.A.M. Piah ◽  
Nor Asiah Muhamad ◽  
Hanafiah Kamarden ◽  
Qamarul Ezani Kamarudin
Keyword(s):  
Electrical Performance ◽  
Low Density Polyethylene ◽  
Linear Low Density Polyethylene ◽  
Polymeric Nanocomposites ◽  
Depolarization Current ◽  
Physical Conditions ◽  
Measurement Results ◽  
Polymeric Insulators ◽  
Base Polymer ◽  
Good Electrical Performance

Polymeric nanocomposites are widely used for high voltage outdoor insulating application due to their good electrical performance. Recently, SiO2, TiO2 and MMT nanofillers are being used as filler because there are listed as main nanofiller commonly used in electrical engineering. Natural rubber (NR) was used because the nature of the interphase is found to affect viscoelasticity and it develops several interphases with the Linear Low-Density Polyethylene (LLDPE) matrix. One of the problems associated with outdoor polymeric insulators is tracking of the surface which can directly influence the reliability of the insulator. This paper presents the outcome of an experimental study to determine the conductivity level of the LLDPE-NR compound, filled with different amount of SiO2, TiO2 and MMT nanofiller using Polarization and Depolarization Current (PDC) measurement technique. LLDPE and NR with the ratio composition of 80:20 were selected as a base polymer. Results show that different compositions as well as the surface physical conditions affect the PDC measurement results.

scholarly journals A Tunable Filter with Different Kinds of Material for Good Electrical Performance

2020 ◽  
Vol 1486 ◽  
pp. 062007
Author(s):  
Chang Zhou ◽  
Jing Xia ◽  
Wanwan Jin ◽  
Li Wang ◽  
Gang Liu ◽  
...  
Keyword(s):  
Tunable Filter ◽  
Electrical Performance ◽  
Good Electrical Performance
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