AM0 Irradiance Conditions for Electrical Performance Measurements of Triple Junction Cells at Extreme Low and High Temperatures

2019 ◽  
Author(s):  
G. Jungst ◽  
A. Gras ◽  
C. Baur
Keyword(s):  
High Temperatures ◽  
Triple Junction ◽  
Electrical Performance ◽  
Performance Measurements

scholarly journals Robust Detection, Classification and Localization of Defects in Large Photovoltaic Plants Based on Unmanned Aerial Vehicles and Infrared Thermography

2020 ◽  
Vol 10 (17) ◽  
pp. 5948 ◽  
Author(s):  
Alberto Fernández ◽  
Rubén Usamentiaga ◽  
Pedro de Arquer ◽  
Miguel Ángel Fernández ◽  
D. Fernández ◽  
...  
Keyword(s):  
Unmanned Aerial Vehicles ◽  
Infrared Thermography ◽  
Large Scale ◽  
Cost Effective ◽  
Electrical Performance ◽  
Performance Measurements ◽  
Robust Detection ◽  
Aerial Vehicles ◽  
Pv Modules

The efficiency and profitability of photovoltaic (PV) plants are highly controlled by their operation and maintenance (O&M) procedures. Today, the effective diagnosis of any possible fault of PV plants remains a technical and economic challenge, especially when dealing with large-scale PV plants. Currently, PV plant monitoring is carried out by either electrical performance measurements or image processing. The first approach presents limited fault detection ability, it is costly and time-consuming, and it is incapable of fast identification of the physical location of the fault. In the second approach, Infrared Thermography (IRT) imaging has been used for the characterization of PV module failures, but their setup and processing are rather complex and an experienced technician is required. The use of Unmanned Aerial Vehicles (UAVs) for IRT imaging of PV plants for health status monitoring of PV modules has been identified as a cost-effective approach that offers 10–-15 fold lower inspection times than conventional techniques. However, previous works have not performed a comprehensive approach in the context of automated UAV inspection using IRT. This work provides a fully automated approach for the: (a) detection, (b) classification, and (c) geopositioning of the thermal defects in the PV modules. The system has been tested on a real PV plant in Spain. The obtained results indicate that an autonomous solution can be implemented for a full characterization of the thermal defects.

TEM assessment of GaN/AlGaN/TiAlTiAu and GaN/AlGaN/TiAlPdAu ohmic contacts

2001 ◽  
Vol 693 ◽  
Author(s):  
M W Fay ◽  
G Moldovan ◽  
I Harrison ◽  
J C Birbeck ◽  
B T Hughes ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
High Temperatures ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Structural Evolution ◽  
Electrical Performance ◽  
Diffusion Front ◽  
Tem Analysis ◽  
Inclusion Formation

AbstractTiAlTiAu and TiAlPdAu contacts to GaN/AlGaN, rapid thermal annealed at temperatures ranging from 650°C to 950°C, have been investigated using conventional and chemical TEM analysis. Ohmic behaviour was seen for TiAlTiAu contacts annealed at 750°C or higher, but was not observed in TiAlPdAu contacts annealed at up to 950°C. The effect of annealing temperature on the structural evolution of the contact is explained in terms of different extents of interfacial reaction. In particular, the formation of TiN after anneals at high temperatures is required to activate the contact. At anneals of 950°C, TiAlTiAu samples show a structure of TiN grains within an interfacial band, with TiN inclusions into the AlGaN preceded by an Al-Au diffusion front. Inclusion formation and the effect on the contact electrical performance is described.

The Influence of High Temperatures on Radiation Damage of GaInP $_{\bf 2}$/GaAs/Ge Triple Junction Cells

2013 ◽  
Vol 3 (2) ◽  
pp. 904-908 ◽  
Author(s):  
C. Brandt ◽  
C. Baur ◽  
A. Caon ◽  
Peter Müller-Buschbaum ◽  
C. Zimmermann ◽  
...  
Keyword(s):  
Radiation Damage ◽  
High Temperatures ◽  
Triple Junction

scholarly journals Experimenting and Simulating Thermoelectric Cooling of an LED Module

2015 ◽  
Vol 11 (4) ◽  
pp. 47 ◽  
Author(s):  
Mika Maaspuro
Keyword(s):  
Heat Dissipation ◽  
Electrical Power ◽  
Fem Simulation ◽  
Simulation Software ◽  
Electrical Performance ◽  
Experimental Setup ◽  
Performance Measurements ◽  
Peltier Element ◽  
Circuit Simulator ◽  
A Tec

Use of a thermoelectric component (TEC) for an LED module cooling will be studied. The issue will be approached by revealing the operation of a thermoelectric component known also as Peltier element, and the main equations describing its behaviour. An experimental setup including an LED module, a TEC, an heatsink and a fan will be build. Heat dissipation and the electrical performance measurements of the hole experimental setup will be conducted. The benefits and the limitations of TEC used in cooling, will be revealed. Cooling effect versus used electrical power will be studied. 3D thermal simulations for the experimental setup using a FEM simulation software will be presented. Alternatively, a standard circuit simulator will be used. A spice model, which imports TEC's parameters from the data sheet, will be developed. The spice simulation results are compared with the experimental results.

scholarly journals Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1958
Author(s):  
Hui Gao ◽  
Ruixia Yang ◽  
Yonghui Zhang
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Cumulative Dose ◽  
Radiation Resistance ◽  
Triple Junction ◽  
Electrical Performance ◽  
Back Surface ◽  
Back Surface Field ◽  
Surface Field

This paper studies the radiation resistance for GaInP/GaInAs/Ge triple-junction space solar cells with a GaInP back-surface field (BSF) in the GaInAs middle subcell compared with those with an AlGaAs BSF. The results show that the initial electrical performance is almost the same for both of them. However, the radiation resistance of the GaInP BSF cell was improved. After irradiation by 1 MeV electron beam with a cumulative dose of 1015 e/cm2, the Jsc declined by 4.73% and 6.61% for the GaInP BSF cell and the AlGaAs BSF cell, respectively; the efficiency degradation was 13.64% and 14.61% for the GaInP BSF cell and the AlGaAs BSF cell, respectively, leading to a reduced degradation level of 6%. The mechanism for GaInP BSF to improve the radiation resistance of GaInP/GaInAs/Ge triple-junction solar cells is also discussed in this work. Similar results were obtained when irradiation cumulative doses varied from 1 × 1014 e/cm2 to 1 × 1016 e/cm2.

The influence of high temperatures on radiation damage of GaInP2/GaAs/Ge triple junction cells

2012 ◽  
Author(s):  
Christian Brandt ◽  
Carsten Baur ◽  
Antonio Caon ◽  
Peter Muller-Buschbaum ◽  
Claus Zimmermann ◽  
...  
Keyword(s):  
Radiation Damage ◽  
High Temperatures ◽  
Triple Junction
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