Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics

2001 ◽  
Vol 48 (9) ◽  
pp. 2002-2008 ◽  
Author(s):  
Sung-Min Yoon ◽  
H. Ishiwara
Keyword(s):  
Memory Cell ◽  
Data Retention ◽  
Retention Characteristics ◽  
Ferroelectric Memory

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

2012 ◽  
Vol 52 (8) ◽  
pp. 1627-1631 ◽  
Author(s):  
Jer-Chyi Wang ◽  
Chih-Ting Lin ◽  
Chi-Hsien Huang ◽  
Chao-Sung Lai ◽  
Chin-Hsiang Liao
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Charge Storage ◽  
Data Retention ◽  
Retention Characteristics

Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

2016 ◽  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrostatic Potential ◽  
Critical Dimension ◽  
Data Retention ◽  
Signal Line ◽  
Adjacent Node ◽  
Storage Node ◽  
Retention Characteristics ◽  
Node Voltage ◽  
The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

The effect of thin film scaling on the capacitance versus voltage characteristic of a ferroelectric memory cell

1995 ◽  
Vol 6 (1-4) ◽  
pp. 281-288 ◽  
Author(s):  
J. W. Gregory ◽  
J. D. Cuchiaro ◽  
C. A. Araujo ◽  
L. M. McMillan
Keyword(s):  
Thin Film ◽  
Memory Cell ◽  
Voltage Characteristic ◽  
Ferroelectric Memory

Data retention characteristics of Bi3.25La0.75Ti3O12 thin films on conductive SrRuO3 electrodes

2007 ◽  
Vol 91 (14) ◽  
pp. 142901 ◽  
Author(s):  
Jang-Sik Lee ◽  
B. S. Kang ◽  
Q. X. Jia
Keyword(s):  
Thin Films ◽  
Data Retention ◽  
Retention Characteristics

The Effect of Trapped Charge Distributions on Data Retention Characteristics of nand Flash Memory Cells

2007 ◽  
Vol 28 (8) ◽  
pp. 750-752 ◽  
Author(s):  
M. Park ◽  
Kangdeog Suh ◽  
Keonsoo Kim ◽  
S. Hur ◽  
K. Kim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cells ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Charge Distributions ◽  
Retention Characteristics ◽  
Trapped Charge
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