Comparison of hole and electron intersubband absorption strengths for quantum well infrared photodetectors

2000 ◽  
Vol 47 (7) ◽  
pp. 1325-1329 ◽  
Author(s):  
J.L. Pan ◽  
C.G. Fonstad
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Intersubband Absorption

P-Type Quantum Well Infrared Photodetectors Grown by OMVPE

1991 ◽  
Vol 240 ◽  
Author(s):  
W. S. Hobson ◽  
A. Zussman ◽  
J. De Jong ◽  
B. F. Levine
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Cutoff Wavelength ◽  
Peak Wavelength ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
Intersubband Absorption ◽  
P Type

ABSTRACTWe report on the growth and fabrication of p-doped long wavelength GaAs/AlxGa1−x As quantum well infrared photodetectors (QWIP) grown by organometallic vapor phase epitaxy. The operation of these devices is based on the photocurrent induced through valence band intersubband absorption by holes and, unlike n-doped QWIPs, can utilize normal incidence illumination. Carbon and zinc were used as the p-type dopants in a low-pressure (30 Torr) vertical-geometry reactor. The Zn-doped QWIP consisted of fifty periods of 48 nm-thick undoped Al0.36Ga0.64As barriers and nominally 4 nm-thick doped GaAs quantum wells. Using normal incidence, a quantum efficiency of η = 2.5% and a detectivity of at 77K were obtained for a peak wavelength λp = 6.8 μm and a cutoff wavelength λ∫ =7.6 μm. The C-doped QWIP had 54 nm-thick Al0.31Ga0.69As barriers and exhibited a normal incidence These initial studies indicate the superiority of carbon to zinc as the p-type dopant for these structures. The detectivity of the C-doped QWIPs is about four times less than n-doped QWIPs for the same λp but have the advantage of utilizing normal incidence illumination.

Corrugated Quantum Well Infrared Photodetectors and Arrays

1999 ◽  
Author(s):  
K. K. Choi ◽  
C. J. Chen ◽  
L. P. Rohkinson ◽  
N. C. Das ◽  
M. Jhabvala
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors

Gain-length scaling in quantum dot/quantum well infrared photodetectors

2009 ◽  
Vol 95 (9) ◽  
pp. 093502 ◽  
Author(s):  
T. Yamanaka ◽  
B. Movaghar ◽  
S. Tsao ◽  
S. Kuboya ◽  
A. Myzaferi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Gain Length ◽  
Length Scaling

Simulation of optical coupling in quantum well infrared photodetectors

1999 ◽  
Author(s):  
Prafulla J. Masalkar ◽  
Hironori Nishino ◽  
Kousaku Yamamoto ◽  
Yoshihiro Miyamoto ◽  
Toshio Fujii
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Optical Coupling ◽  
Quantum Well Infrared Photodetectors

Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors

1997 ◽  
Vol 70 (4) ◽  
pp. 414-416 ◽  
Author(s):  
M. Ershov ◽  
H. C. Liu ◽  
M. Buchanan ◽  
Z. R. Wasilewski ◽  
V. Ryzhii
Keyword(s):  
Quantum Well ◽  
Excitation Power ◽  
Infrared Photodetectors ◽  
High Excitation ◽  
Quantum Well Infrared Photodetectors
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