P-Type Quantum Well Infrared Photodetectors Grown by OMVPE

1991 ◽  
Vol 240 ◽  
Author(s):  
W. S. Hobson ◽  
A. Zussman ◽  
J. De Jong ◽  
B. F. Levine
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Cutoff Wavelength ◽  
Peak Wavelength ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
Intersubband Absorption ◽  
P Type

ABSTRACTWe report on the growth and fabrication of p-doped long wavelength GaAs/AlxGa1−x As quantum well infrared photodetectors (QWIP) grown by organometallic vapor phase epitaxy. The operation of these devices is based on the photocurrent induced through valence band intersubband absorption by holes and, unlike n-doped QWIPs, can utilize normal incidence illumination. Carbon and zinc were used as the p-type dopants in a low-pressure (30 Torr) vertical-geometry reactor. The Zn-doped QWIP consisted of fifty periods of 48 nm-thick undoped Al0.36Ga0.64As barriers and nominally 4 nm-thick doped GaAs quantum wells. Using normal incidence, a quantum efficiency of η = 2.5% and a detectivity of at 77K were obtained for a peak wavelength λp = 6.8 μm and a cutoff wavelength λ∫ =7.6 μm. The C-doped QWIP had 54 nm-thick Al0.31Ga0.69As barriers and exhibited a normal incidence These initial studies indicate the superiority of carbon to zinc as the p-type dopant for these structures. The detectivity of the C-doped QWIPs is about four times less than n-doped QWIPs for the same λp but have the advantage of utilizing normal incidence illumination.

Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells

1996 ◽  
Vol 450 ◽  
Author(s):  
D. K. Sengupta ◽  
S. Kim ◽  
T. Horton ◽  
H. C. Kuo ◽  
S. Thomas ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Structural Parameters ◽  
Spectral Response ◽  
Interface Roughness ◽  
Scanning Tunneling ◽  
Infrared Photodetectors ◽  
Cross Sectional ◽  
Quantum Well Infrared Photodetectors ◽  
P Type

ABSTRACTP-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 Å) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epitaxy in which we optimized the group V source supply sequence so that a 6 K photoluminescence linewidth as narrow as 8.4 meV was observed from a structure with 10 Å wells. Analysis of the PL suggests that interface roughness was minimized. Cross-sectional scanning tunneling microscopy, double crystal x-ray diffraction, and cross-sectional tunneling electron microscopy confirmed that high-quality interfaces and uniform layers were obtained. Using the derived structural parameters, photocurrent spectral response was theoretically predicted for these QWIPs and then experimentally verified.

MULTI-COLOR, BROADBAND QUANTUM WELL INFRARED PHOTODETECTORS FOR MID-, LONG-, AND VERY LONG-WAVELENGTH INFRARED APPLICATIONS

2002 ◽  
Vol 12 (03) ◽  
pp. 761-801 ◽  
Author(s):  
SHENG S. LI
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Rapid Development ◽  
Infrared Photodetectors ◽  
Basic Operation ◽  
Spectral Window ◽  
Quantum Well Structures ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
Long Wavelength Infrared

Quantum well infrared photodetectors (QWIPs) have been widely investigated for the 3–5 μm mid-wavelength infrared (MWIR) and 8–12 μm long-wavelength infrared (LWIR) atmospheric spectral windows as well as very long wavelength infrared (VLWIR: λc > 14 μm) imaging array applications in the past decade. The mature III-V compound semiconductor growth technology and the design flexibility of device structures have led to the rapid development of various QWIP structures for infrared focal plane arrays (FPAs) applications. In addition to the single-color QWIP with narrow bandwidth, multi-color or broadband QWIPs required for advanced IR sensing and imaging applications have also emerged in recent years. Using band gap engineering approach, the multi-color (2, 3, and 4-color) QWIPs with multi-stack quantum wells and voltage-tunable asymmetrical coupled quantum well structures for detection in the MWIR, LWIR, and VLWIR bands have been demonstrated recently. The triple-coupled (TC-) QWIP employs the quantum confined Stark effect to tune the peak detection wavelength by the applied bias voltage, A typical single-color QWIP exhibits a rather narrow spectral bandwidth of 1 to 2 μm. For certain applications, such as spectroscopy, sensing of a broader range of infrared radiation is highly desirable. Using the stacked quantum wells with different well width and depth, the digital-graded superlattice barrier (DGSLB) or the linear-graded barrier (LGB) structures, broadband (BB-) QWIPs covering the 8–14 μm atmospheric spectral window have been reported recently. In this chapter, the basic operation principles of a QWIP, and the design, fabrication, and characterization of multi-color and broadband QWIPs based on the GaAs/AlGaAs and InGaAs/AlGaAs material systems for the MW/LW/VLWIR applications are depicted.

Multi-Color Quantum Well Infrared Photodetectors for Mid-, Long-, and Very Long- Wavelength Infrared Applications (invited)

2001 ◽  
Vol 692 ◽  
Author(s):  
Sheng S. Li
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Rapid Development ◽  
Focal Plane Arrays ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
Design Flexibility ◽  
Ir Detection ◽  
Long Wavelength Infrared

AbstractQuantum well infrared photodetectors (QWIPs) have been widely investigated for the 3–5 μm mid-wavelength infrared (MWIR) and 8–12 μm long-wavelength infrared (LWIR) atmospheric spectral windows as well as very long wavelength infrared (VLWIR: λc 14 μm) detection in the past decade. The mature III-V compound semiconductor growth technology and the design flexibility of device structures have led to the rapid development of various QWIP structures for infrared focal plane arrays (FPAs) applications. In addition to the single-color QWIP with narrow bandwidth, the multi-color QWIP required for advanced IR sensing and imaging applications have also been emerged in recent years. Using band gap engineering approach, the multi-color (2, 3, and 4- color) QWIPs using multi-stack quantum wells with different well width and depth and voltage-tunable triple- coupled quantum well (TCQW) structure for detection in the MWIR, LWIR, and VLWIR bands have been demonstrated. In this paper, the design, fabrication, and characterization of a voltage-tunable 2-stack 3-color QWIP for MW/LW/LW IR detection and a 3-stack 3-color QWIP for detection in the water, ozone, and CO2 atmospheric blocking bands are depicted.

P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices

1998 ◽  
Author(s):  
Hui C. Liu ◽  
L. Li ◽  
Louis B. Allard ◽  
Margaret Buchanan ◽  
Zbigniew R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Imaging ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
P Type ◽  
Long Wavelength Infrared
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