Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors

2014 ◽  
Vol 115 (12) ◽  
pp. 124503 ◽  
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
Intersubband Absorption

P-Type Quantum Well Infrared Photodetectors Grown by OMVPE

1991 ◽  
Vol 240 ◽  
Author(s):  
W. S. Hobson ◽  
A. Zussman ◽  
J. De Jong ◽  
B. F. Levine
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Cutoff Wavelength ◽  
Peak Wavelength ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
Intersubband Absorption ◽  
P Type

ABSTRACTWe report on the growth and fabrication of p-doped long wavelength GaAs/AlxGa1−x As quantum well infrared photodetectors (QWIP) grown by organometallic vapor phase epitaxy. The operation of these devices is based on the photocurrent induced through valence band intersubband absorption by holes and, unlike n-doped QWIPs, can utilize normal incidence illumination. Carbon and zinc were used as the p-type dopants in a low-pressure (30 Torr) vertical-geometry reactor. The Zn-doped QWIP consisted of fifty periods of 48 nm-thick undoped Al0.36Ga0.64As barriers and nominally 4 nm-thick doped GaAs quantum wells. Using normal incidence, a quantum efficiency of η = 2.5% and a detectivity of at 77K were obtained for a peak wavelength λp = 6.8 μm and a cutoff wavelength λ∫ =7.6 μm. The C-doped QWIP had 54 nm-thick Al0.31Ga0.69As barriers and exhibited a normal incidence These initial studies indicate the superiority of carbon to zinc as the p-type dopant for these structures. The detectivity of the C-doped QWIPs is about four times less than n-doped QWIPs for the same λp but have the advantage of utilizing normal incidence illumination.

QUANTUM WELL INFRARED PHOTOCONDUCTORS IN INFRARED DETECTORS TECHNOLOGY

2002 ◽  
Vol 12 (03) ◽  
pp. 593-658 ◽  
Author(s):  
A. ROGALSKI
Keyword(s):  
Quantum Well ◽  
Schottky Barrier ◽  
Infrared Detectors ◽  
Infrared Photodetectors ◽  
Ir Detectors ◽  
High Quantum Efficiency ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
G Ratio ◽  
Hgcdte Photodiodes

Investigations of the performance of quantum well infrared photodetectors (QWIPs) as compared to other types of semiconductor infrared (IR) detectors are presented. In comparative studies both photon and thermal detectors are considered. More attention is paid to photon detectors and between them we can distinguish: HgCdTe photodiodes, InSb photodiodes, Schottky barrier photoemissive detectors, and doped silicon detectors. Special attention has been paid to competitive technologies in long wavelength IR (LWIR) and very LWIR (VLWIR) spectral ranges with emphasis on the material properties, device structure, and their impact on FPA performance. The potential performance of different materials as infrared detectors is examined utilizing the α/G ratio, where α is the absorption coefficient and G is the thermal generation. From the discussion results, LWIR QWIP cannot compete with HgCdTe photodiode as the single device especially at higher temperature operation(> 70 K) due to fundamental limitations associated with intersubband transitions. However, the advantage of HgCdTe is less distinct in the temperature range below 50 K due to problems involved in the HgCdTe material (p-type doping, Shockley–Read recombination, trap-assisted tunneling, surface and interface instabilities). Even though the QWIP is a photoconductor, several its properties such as high impedance, fast response time, long integration time, and low power consumption, well comply with requirements for large FPAs fabrication. Due to the high material quality at low temperature, QWIP has potential advantages over HgCdTe for VLWIR FPA applications in terms of the array size, uniformity, yield and cost of the systems. Both HgCdTe photodiodes and quantum well infrared photodetectors offer multicolor capability in the MWIR and LWIR range. Powerful possibilities of QWIP technology are connected with VLWIR FPA applications and with multicolor detection. QWIP FPAs combine the advantages of PtSi Schottky barrier arrays (high uniformity, high yield, radiation hardness, large arrays, lower cost) with the advantages of HgCdTe (high quantum efficiency and long wavelength response).

19 μm cutoff long‐wavelength GaAs/AlxGa1−xAs quantum‐well infrared photodetectors

1992 ◽  
Vol 71 (10) ◽  
pp. 5130-5135 ◽  
Author(s):  
B. F. Levine ◽  
A. Zussman ◽  
J. M. Kuo ◽  
J. de Jong
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors
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