Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95
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Published By Inst. Electr. Eng. Japan

0780326180

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An IGBT gate drive ASIC with 3 A/12.5 A CMOS output stages

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 ◽

10.1109/ispsd.1995.515073 ◽

2002 ◽

Cited By ~ 2

Author(s):

A. Biber ◽

C. Kuratli ◽

Qiuting Huang ◽

N. Felber ◽

U. Thiemann

Keyword(s):

Output Stages

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A self-aligned latch-free IGBT with sidewall diffused n/sup +/ emitter

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 ◽

10.1109/ispsd.1995.515034 ◽

2002 ◽

Author(s):

Chong-Man Yun ◽

Doo-Young Kim ◽

Byung-Hoon Lee ◽

Min-Koo Han ◽

Yearn-Ik Choi

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A new trench gate accumulation mode field effect emitter switched thyristor

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 ◽

10.1109/ispsd.1995.515032 ◽

2002 ◽

Cited By ~ 3

Author(s):

M.S. Shekar ◽

J. Korec ◽

B.J. Baliga

Keyword(s):

Field Effect ◽

Accumulation Mode ◽

Mode Field

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Oxygen-contamination-free ultra-low-resistance silicided contact technology for high performance power devices

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 ◽

10.1109/ispsd.1995.515077 ◽

2002 ◽

Author(s):

K. Ino ◽

K. Yamada ◽

G.S. Jong ◽

T. Ohmi

Keyword(s):

High Performance ◽

Power Devices ◽

Low Resistance ◽

Oxygen Contamination

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2000 V 500 A high power IGBT module

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 ◽

10.1109/ispsd.1995.515013 ◽

2002 ◽

Cited By ~ 3

Author(s):

A. Tanaka ◽

M. Mori ◽

R. Saito ◽

K. Yamada

Keyword(s):

High Power ◽

Igbt Module

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Tunneling in thin SOI high voltage devices

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 ◽

10.1109/ispsd.1995.515022 ◽

2002 ◽

Cited By ~ 10

Author(s):

S. Merchant ◽

E. Arnold ◽

M. Simpson

Keyword(s):

High Voltage

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A lateral SOI BMFET with high current gain

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 ◽

10.1109/ispsd.1995.515051 ◽

2002 ◽

Author(s):

Seong-Dong Kim ◽

Dae-Seok Byeon ◽

Kyoung Yang ◽

Oh-Kyong Kwon ◽

Min-Koo Han ◽

...

Keyword(s):

Current Gain ◽

High Current

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Thin-film SOI power MOSFET design based on emission microscopy

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 ◽

10.1109/ispsd.1995.515082 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Matsumoto ◽

T. Fukumitsu ◽

Il-Jung Kim ◽

T. Sakai ◽

T. Yachi

Keyword(s):

Thin Film ◽

Power Mosfet ◽

Emission Microscopy

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The effect of electron irradiation and proton implantation on and a novel operation of IGBT integrated current sensors

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 ◽

10.1109/ispsd.1995.515041 ◽

2002 ◽

Author(s):

Z.J. Shen ◽

V. Parthasarathy ◽

T.P. Chow

Keyword(s):

Electron Irradiation ◽

Proton Implantation ◽

Current Sensors

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The bidirectional power NMOS-a new concept in battery disconnect switching

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 ◽

10.1109/ispsd.1995.515085 ◽

2002 ◽

Cited By ~ 4

Author(s):

R.K. Williams ◽

R. Blattner ◽

M.S. Shekar ◽

A. Butani ◽

M. Darwish

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Inst. Electr. Eng. Japan

An IGBT gate drive ASIC with 3 A/12.5 A CMOS output stages

A self-aligned latch-free IGBT with sidewall diffused n/sup +/ emitter

A new trench gate accumulation mode field effect emitter switched thyristor

Oxygen-contamination-free ultra-low-resistance silicided contact technology for high performance power devices

2000 V 500 A high power IGBT module

Tunneling in thin SOI high voltage devices

A lateral SOI BMFET with high current gain

Thin-film SOI power MOSFET design based on emission microscopy

The effect of electron irradiation and proton implantation on and a novel operation of IGBT integrated current sensors

The bidirectional power NMOS-a new concept in battery disconnect switching

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95
Latest Publications