Gate-overlapped lightly doped drain poly-Si thin-film transistors for large area-AMLCD

1998 ◽  
Vol 45 (6) ◽  
pp. 1272-1279 ◽  
Author(s):  
Kwon-Young Choi ◽  
Jong-Wook Lee ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Large Area ◽  
Lightly Doped Drain ◽  
Si Thin Film

Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode

1991 ◽  
Vol 30 (Part 2, No. 4B) ◽  
pp. L772-L774
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Takaya Suzuki ◽  
Yasunori Ohno ◽  
Akio Mimura ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Ion Source ◽  
Rf Plasma ◽  
Large Area ◽  
Plasma Cathode ◽  
Si Thin Film

Fabrication of Low-Temperature Poly-Si Thin Film Transistors with Self-Aligned Graded Lightly Doped Drain Structure

2002 ◽  
Vol 5 (1) ◽  
pp. G1 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Ching-Wei Lin ◽  
Li-Jing Cheng ◽  
Chang-Ho Tseng ◽  
Ting-Kuo Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Lightly Doped Drain ◽  
Si Thin Film

Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2370-L2372 ◽  
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Takaya Suzuki ◽  
Akio Mimura ◽  
Yasunori Ohno ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Ion Source ◽  
Large Area ◽  
Excimer Laser Annealing ◽  
Si Thin Film ◽  
Xecl Excimer Laser

Excimer-Laser Growth of Si Large-Grain Arrays

2004 ◽  
Vol 808 ◽  
Author(s):  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Liquid Crystal Displays ◽  
Medium Size ◽  
Large Area ◽  
Development Center ◽  
Si Thin Film

ABSTRACTAmorphous silicon (a-Si) Thin Film Transistors (TFT) will continue to play an important role in large-area liquid crystal displays (LCD), however, there is also a strong demand for ultra-high performance TFTs aimed at intelligent small (or medium) size displays. For this reason, “Crystal Si on glass” has become an increasingly attractive solution. This paper reviews recent work performed at ALTEDEC (Advanced LCD Technologies Development Center Co., Ltd, with regard to growing an array of large Si grains at low temperature. The results obtained so far indicate that satisfactory progress has been made towards the achievement of this goal.

A Novel Design of Quasi-Lightly Doped Drain Poly-Si Thin-Film Transistors for Suppression of Kink and Gate-Induced Drain Leakage Current

2015 ◽  
Vol 36 (4) ◽  
pp. 351-353 ◽  
Author(s):  
Jae Hyo Park ◽  
Ki Hwan Seok ◽  
Hyung Yoon Kim ◽  
Hee Jae Chae ◽  
Sol Kyu Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Lightly Doped Drain ◽  
Novel Design ◽  
Si Thin Film
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