Fabrication of Low-Temperature Poly-Si Thin Film Transistors with Self-Aligned Graded Lightly Doped Drain Structure

Huang-Chung Cheng; Ching-Wei Lin; Li-Jing Cheng; Chang-Ho Tseng; Ting-Kuo Chang; Yuan-Ching Peng; Wen-Tung Wang

doi:10.1149/1.1421748

Fabrication of Low-Temperature Poly-Si Thin Film Transistors with Self-Aligned Graded Lightly Doped Drain Structure

Electrochemical and Solid-State Letters ◽

10.1149/1.1421748 ◽

2002 ◽

Vol 5 (1) ◽

pp. G1 ◽

Cited By ~ 6

Author(s):

Huang-Chung Cheng ◽

Ching-Wei Lin ◽

Li-Jing Cheng ◽

Chang-Ho Tseng ◽

Ting-Kuo Chang ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Lightly Doped Drain ◽

Si Thin Film

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A comparative study of n-channel low temperature poly-Si thin-film transistors with a body terminal or a lightly-doped-drain structure

Semiconductor Science and Technology ◽

10.1088/1361-6641/aaa141 ◽

2018 ◽

Vol 33 (2) ◽

pp. 025003 ◽

Cited By ~ 5

Author(s):

Yanwen Wu ◽

Mingxiang Wang ◽

Huaisheng Wang ◽

Dongli Zhang

Keyword(s):

Thin Film ◽

Low Temperature ◽

Comparative Study ◽

Thin Film Transistors ◽

Lightly Doped Drain ◽

Si Thin Film

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Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.1067 ◽

1998 ◽

Vol 37 (Part 1, No. 3B) ◽

pp. 1067-1070 ◽

Cited By ~ 1

Author(s):

Kwon-Young Choi ◽

Kee-Chan Park ◽

Min-Koo Han

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Lightly Doped Drain ◽

Si Thin Film

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Reliability of Low-Temperature Poly-Si Thin Film Transistors with Lightly Doped Drain Structures

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4257 ◽

2003 ◽

Vol 42 (Part 1, No. 7A) ◽

pp. 4257-4260 ◽

Cited By ~ 11

Author(s):

Mamoru Furuta ◽

Yukiharu Uraoka ◽

Takashi Fuyuki

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Lightly Doped Drain ◽

Si Thin Film

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Analysis of reliability in low-temperature poly-Si thin film transistors using pico-second time-resolved emission microscope

Digest. International Electron Devices Meeting, ◽

10.1109/iedm.2002.1175907 ◽

2003 ◽

Cited By ~ 1

Author(s):

Y. Uraoka ◽

N. Hirai ◽

H. Yano ◽

T. Hatayama ◽

T. Fuyuki

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Time Resolved ◽

Si Thin Film

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Low temperature processed poly-Si thin-film transistors with thinner LPD-SiO/sub 2/ as gate insulator and its reliability

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays ◽

10.1109/amlcd.1995.540966 ◽

2002 ◽

Author(s):

Ching-Lin Fan ◽

Ching-Fa Yeh ◽

Hsiung-Kuang Tsai ◽

Water Lur ◽

Po-Wen Yen

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Gate Insulator ◽

Si Thin Film

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Enhancing Repetitive Uniaxial Mechanical Bending Endurance at R=2mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors

IEEE Electron Device Letters ◽

10.1109/led.2019.2900075 ◽

2019 ◽

pp. 1-1

Author(s):

Shin-Ping Huang ◽

Yu-Zhe Zheng ◽

Ting-Chang Chang ◽

Bo-Wei Chen ◽

Po-Hsun Chen ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Trench Structure ◽

Mechanical Bending ◽

Si Thin Film

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Peripheral circuit designs using low-temperature p-type poly-Si thin-film transistors

Journal of the Society for Information Display ◽

10.1889/1.2196517 ◽

2006 ◽

Vol 14 (4) ◽

pp. 403 ◽

Cited By ~ 1

Author(s):

Woo-Jin Nam ◽

Jae-Hoon Lee ◽

Hye-Jin Lee ◽

Hee-Sun Shin ◽

Min-Koo Han

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

P Type ◽

Si Thin Film

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Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4213 ◽

2003 ◽

Vol 42 (Part 1, No. 7A) ◽

pp. 4213-4217 ◽

Cited By ~ 20

Author(s):

Satoshi Inoue ◽

Satoshi Takenaka ◽

Tatsuya Shimoda

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Self Heating ◽

Si Thin Film ◽

Low Temperature Process

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Hot-Carrier Degradation and Electric Field and Electron Concentration near Drain Junction in Low-Temperature N-Channel Single Drain and Lightly Doped Drain Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1322 ◽

2007 ◽

Vol 46 (3B) ◽

pp. 1322-1327 ◽

Cited By ~ 5

Author(s):

Gen Usami ◽

Yukisato Nogami ◽

Toshihisa Yajima ◽

Masahiro Yamagata ◽

Toshifumi Satoh ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Electric Field ◽

Electron Concentration ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Silicon Thin Film ◽

Hot Carrier ◽

Lightly Doped Drain ◽

Hot Carrier Degradation

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Characterisation of low temperature poly-Si thin film transistors

Solid-State Electronics ◽

10.1016/0038-1101(91)90002-g ◽

1991 ◽

Vol 34 (7) ◽

pp. 671-679 ◽

Cited By ~ 44

Author(s):

S.D. Brotherton ◽

J.R. Ayres ◽

N.D. Young

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Si Thin Film

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