Excimer-Laser Growth of Si Large-Grain Arrays

2004 ◽  
Vol 808 ◽  
Author(s):  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Liquid Crystal Displays ◽  
Medium Size ◽  
Large Area ◽  
Development Center ◽  
Si Thin Film

ABSTRACTAmorphous silicon (a-Si) Thin Film Transistors (TFT) will continue to play an important role in large-area liquid crystal displays (LCD), however, there is also a strong demand for ultra-high performance TFTs aimed at intelligent small (or medium) size displays. For this reason, “Crystal Si on glass” has become an increasingly attractive solution. This paper reviews recent work performed at ALTEDEC (Advanced LCD Technologies Development Center Co., Ltd, with regard to growing an array of large Si grains at low temperature. The results obtained so far indicate that satisfactory progress has been made towards the achievement of this goal.

scholarly journals A Low-Power Memory-in-Pixel Circuit for Liquid Crystal Displays Comprising Low-Temperature Poly-Silicon and Oxide Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1958
Author(s):  
Jongbin Kim ◽  
Woo-Rim Lee ◽  
Hoon-Ju Chung ◽  
Seung-Woo Lee
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Low Temperature ◽  
Power Consumption ◽  
Low Power ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Liquid Crystal Displays ◽  
Oxide Thin Film ◽  
Measurement Results

In this paper, a new pixel structure using low-temperature polycrystalline silicon and oxide (LTPO) thin-film transistors (TFTs) for low-power liquid crystal displays (LCDs) is proposed. The extremely low off-state current of oxide semiconductor TFTs enables the proposed circuit to operate at a very low frame frequency of 1/60 Hz, so that the power consumption can be significantly reduced. In addition, the low-temperature polycrystalline silicon TFTs with high reliability directly drive pixels, which can achieve stable and flicker-free LCDs. The proposed circuit is fabricated using the LTPO TFT backplane and successfully verified by simulation and measurement results. The measurement results prove that the proposed circuit operates well without further programming for 60 s, and the power consumption in the panel (except backlight power) can be reduced to 0.02% of that of conventional LCD.

Poly-Si Thin-Film Transistors Robust Against Hot-Carrier Stress and Application to Liquid Crystal Displays Fabricated by a 450°C Process

2003 ◽  
Vol 93 ◽  
pp. 19-30
Author(s):  
Takeo Shiba ◽  
Mutsuko Hatano ◽  
Mieko Matsumura ◽  
Yoshiaki Toyota ◽  
Yoshiharu Tai ◽  
...  
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Thin Film Transistors ◽  
Liquid Crystal Displays ◽  
Hot Carrier ◽  
Hot Carrier Stress ◽  
Si Thin Film

Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display

1992 ◽  
Vol 31 (Part 1, No. 12B) ◽  
pp. 4559-4562 ◽  
Author(s):  
Yutaka Miyata ◽  
Mamoru Furuta ◽  
Tatsuo Yoshioka ◽  
Tetsuya Kawamura
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Liquid Crystal Display ◽  
Large Area ◽  
Silicon Thin Film

Process Techniques of 15-inch Full-Color High-Resolution Liquid Crystal Displays Addressed by a-Si Thin Film Transistors

1992 ◽  
Vol 31 (Part 1, No. 12B) ◽  
pp. 4574-4578 ◽  
Author(s):  
Kenichi Fujii ◽  
Yasuo Tanaka ◽  
Kouichi Honda ◽  
Hiroshi Tsutsu ◽  
Hideo Koseki ◽  
...  
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
High Resolution ◽  
Thin Film Transistors ◽  
Liquid Crystal Displays ◽  
Full Color ◽  
Si Thin Film
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