A Novel Design of Quasi-Lightly Doped Drain Poly-Si Thin-Film Transistors for Suppression of Kink and Gate-Induced Drain Leakage Current

Jae Hyo Park; Ki Hwan Seok; Hyung Yoon Kim; Hee Jae Chae; Sol Kyu Lee; Seung Ki Joo

doi:10.1109/led.2015.2405348

A Novel Design of Quasi-Lightly Doped Drain Poly-Si Thin-Film Transistors for Suppression of Kink and Gate-Induced Drain Leakage Current

IEEE Electron Device Letters ◽

10.1109/led.2015.2405348 ◽

2015 ◽

Vol 36 (4) ◽

pp. 351-353 ◽

Cited By ~ 2

Author(s):

Jae Hyo Park ◽

Ki Hwan Seok ◽

Hyung Yoon Kim ◽

Hee Jae Chae ◽

Sol Kyu Lee ◽

...

Keyword(s):

Thin Film ◽

Leakage Current ◽

Thin Film Transistors ◽

Lightly Doped Drain ◽

Novel Design ◽

Si Thin Film

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Photo-Leakage Current of Poly-Si Thin Film Transistors with Offset and Lightly Doped Drain Structure

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.5757 ◽

1999 ◽

Vol 38 (Part 1, No. 10) ◽

pp. 5757-5761 ◽

Cited By ~ 3

Author(s):

Kazuhiro Kobayashi ◽

Yasunori Niwano

Keyword(s):

Thin Film ◽

Leakage Current ◽

Thin Film Transistors ◽

Lightly Doped Drain ◽

Si Thin Film

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An Image Sensor using Photo-leakage Current and Feed-through Voltage of amorphous Si Thin-Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2008-02/35/2327 ◽

2008 ◽

Keyword(s):

Thin Film ◽

Leakage Current ◽

Thin Film Transistors ◽

Image Sensor ◽

Amorphous Si ◽

Si Thin Film

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The effect of electrical stress on the leakage current of polycrystalline Si thin-film transistors fabricated by metal-induced lateral crystallization

Thin Solid Films ◽

10.1016/j.tsf.2004.02.037 ◽

2004 ◽

Vol 466 (1-2) ◽

pp. 303-306 ◽

Cited By ~ 4

Author(s):

Yeo-Geon Yoon ◽

Gi-Bum Kim ◽

Tae-Kyung Kim ◽

Byung-Il Lee ◽

Seung-Ki Joo

Keyword(s):

Thin Film ◽

Leakage Current ◽

Thin Film Transistors ◽

Electrical Stress ◽

Lateral Crystallization ◽

Si Thin Film

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Poly-Si thin film transistors with a source overlap and a drain offset: leakage current characteristics

Thin Solid Films ◽

10.1016/s0040-6090(98)01555-7 ◽

1999 ◽

Vol 341 (1-2) ◽

pp. 148-151 ◽

Cited By ~ 4

Author(s):

H.K Jang ◽

C.E Lee ◽

S.J Noh

Keyword(s):

Thin Film ◽

Leakage Current ◽

Thin Film Transistors ◽

Current Characteristics ◽

Si Thin Film

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Fabrication of Low-Temperature Poly-Si Thin Film Transistors with Self-Aligned Graded Lightly Doped Drain Structure

Electrochemical and Solid-State Letters ◽

10.1149/1.1421748 ◽

2002 ◽

Vol 5 (1) ◽

pp. G1 ◽

Cited By ~ 6

Author(s):

Huang-Chung Cheng ◽

Ching-Wei Lin ◽

Li-Jing Cheng ◽

Chang-Ho Tseng ◽

Ting-Kuo Chang ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Lightly Doped Drain ◽

Si Thin Film

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Gate-overlapped lightly doped drain poly-Si thin-film transistors for large area-AMLCD

IEEE Transactions on Electron Devices ◽

10.1109/16.678541 ◽

1998 ◽

Vol 45 (6) ◽

pp. 1272-1279 ◽

Cited By ~ 21

Author(s):

Kwon-Young Choi ◽

Jong-Wook Lee ◽

Min-Koo Han

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Large Area ◽

Lightly Doped Drain ◽

Si Thin Film

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A comparative study of n-channel low temperature poly-Si thin-film transistors with a body terminal or a lightly-doped-drain structure

Semiconductor Science and Technology ◽

10.1088/1361-6641/aaa141 ◽

2018 ◽

Vol 33 (2) ◽

pp. 025003 ◽

Cited By ~ 5

Author(s):

Yanwen Wu ◽

Mingxiang Wang ◽

Huaisheng Wang ◽

Dongli Zhang

Keyword(s):

Thin Film ◽

Low Temperature ◽

Comparative Study ◽

Thin Film Transistors ◽

Lightly Doped Drain ◽

Si Thin Film

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Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.1067 ◽

1998 ◽

Vol 37 (Part 1, No. 3B) ◽

pp. 1067-1070 ◽

Cited By ~ 1

Author(s):

Kwon-Young Choi ◽

Kee-Chan Park ◽

Min-Koo Han

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Lightly Doped Drain ◽

Si Thin Film

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New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current

10.7567/ssdm.1997.c-7-4 ◽

1997 ◽

Author(s):

Jae-Hong Jeon ◽

Cheol-Min Park ◽

Juhn-Suk Yoo ◽

Cheon-Hong Kim ◽

Min-Koo Han

Keyword(s):

Thin Film ◽

Leakage Current ◽

Thin Film Transistors ◽

Channel Region ◽

Si Thin Film

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Conduction Mechanism of Leakage Current Observed in Metal-Oxide-Semiconductor Transistors and Poly-Si Thin-Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.206 ◽

1992 ◽

Vol 31 (Part 1, No. 2A) ◽

pp. 206-209 ◽

Cited By ~ 59

Author(s):

Masatoshi Yazakis ◽

Satoshi Takenaka ◽

Hiroyuki Ohshima

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Leakage Current ◽

Thin Film Transistors ◽

Conduction Mechanism ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Thin Film

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