Modeling electron and hole transport with full-band structure effects by means of the Spherical-Harmonics Expansion of the BTE

1998 ◽  
Vol 45 (1) ◽  
pp. 230-238 ◽  
Author(s):  
M.C. Vecchi ◽  
M. Rudan
Keyword(s):  
Band Structure ◽  
Spherical Harmonics ◽  
Hole Transport ◽  
Full Band ◽  
Spherical Harmonics Expansion ◽  
Full Band Structure

scholarly journals Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 361-365 ◽  
Author(s):  
Susanna Reggiani ◽  
Maria Cristina Vecchi ◽  
Massimo Rudan
Keyword(s):  
Temperature Dependence ◽  
Spherical Harmonics ◽  
Hole Mobility ◽  
Scattering Mechanisms ◽  
Mobility Data ◽  
Number Of Factors ◽  
Wide Range ◽  
Full Band ◽  
Spherical Harmonics Expansion ◽  
Full Band Structure

By adopting the solution method for the BTE based on the spherical-harmonics expansion (SHE) [1], and using the full-band structure for both the electron and valence band of silicon [2], the temperature dependence of a number of scattering mechanisms has been modeled and implemented into the code HARM performing the SHE solution. Comparisons with the experimental mobility data show agreement over a wide range of temperatures. The analysis points out a number of factors from which the difficulties encountered in earlier investigations seemingly originate, particularly in the case of hole mobility.

scholarly journals Monte Carlo Simulations of High Field Transport in Electroluminescent Devices

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 401-405
Author(s):  
Manfred Dür ◽  
Stephen M. Goodnick ◽  
Martin Reigrotzki ◽  
Ronald Redmer
Keyword(s):  
Band Structure ◽  
High Field ◽  
Light Emission ◽  
Essential Element ◽  
Impact Excitation ◽  
Field Energy ◽  
Pseudopotential Calculations ◽  
Full Band ◽  
Full Band Structure

High field transport in phosphor materials is an essential element of thin film electroluminescent device performance. Due to the high accelerating fields in these structures (1–3 MV/cm), a complete description of transport under high field conditions utilizing information on the full band structure of the material is critical to understand the light emission process due to impact excitation of luminescent impurities. Here we investigate the role of band structure for ZnS, GaN, and SrS based on empirical pseudopotential calculations to study its effect on the high field energy distribution of conduction band electrons.

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