Current impulse response of thin InP p+‐i‐n+ diodes using full band structure Monte Carlo method

2007 ◽  
Vol 101 (4) ◽  
pp. 044502 ◽  
Author(s):  
A. H. You ◽  
P. L. Cheang
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Band Structure ◽  
Impulse Response ◽  
Current Impulse ◽  
Full Band ◽  
Full Band Structure

scholarly journals Hierarchy of Full Band Structure Models for Monte Carlo Simulation

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 147-153 ◽  
Author(s):  
U. Ravaioli ◽  
A. Duncan ◽  
A. Pacelli ◽  
C. Wordelman ◽  
K. Hess
Keyword(s):  
Monte Carlo ◽  
Band Structure ◽  
Computationally Efficient ◽  
Average Value ◽  
Scattering Rate ◽  
Numerical Noise ◽  
The Monte Carlo Method ◽  
Full Band ◽  
Scattering Anisotropy ◽  
Full Band Structure

This paper discusses the various hierarchy levels that are possible when the full band structure is considered. At the highest level, the scatterings are treated using complete k-k’ transition rates, which entail extremely memory intensive computational applications. At the lowest level, the scattering anisotropy is neglected and the scattering rate is considered to be a constant average value on energy isosurfaces of the bandstructure. This model is more practical for device simulation. In between the two extremes, it is possible to design intermediate models which preserve some essential features of both. At all levels of the band structure hierarchy of models, there are similar issues of numerical noise, related to the sampling of real and momentum space that the Monte Carlo method necessarily performs with a relatively small number of particles. We discuss here computationally efficient approaches based on the assignment of variable weights to the simulated particles, in conjunction with careful gatherscatter procedures to split particles of large weight and combine particles of small weight.

scholarly journals Monte Carlo Simulations of High Field Transport in Electroluminescent Devices

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 401-405
Author(s):  
Manfred Dür ◽  
Stephen M. Goodnick ◽  
Martin Reigrotzki ◽  
Ronald Redmer
Keyword(s):  
Band Structure ◽  
High Field ◽  
Light Emission ◽  
Essential Element ◽  
Impact Excitation ◽  
Field Energy ◽  
Pseudopotential Calculations ◽  
Full Band ◽  
Full Band Structure

High field transport in phosphor materials is an essential element of thin film electroluminescent device performance. Due to the high accelerating fields in these structures (1–3 MV/cm), a complete description of transport under high field conditions utilizing information on the full band structure of the material is critical to understand the light emission process due to impact excitation of luminescent impurities. Here we investigate the role of band structure for ZnS, GaN, and SrS based on empirical pseudopotential calculations to study its effect on the high field energy distribution of conduction band electrons.

Performances of Non-Line-of-Sight Ultraviolet Multi-Scatter Propagation for Noncoplanar Geometries

2012 ◽  
Vol 571 ◽  
pp. 214-218
Author(s):  
Yi Nan Tang ◽  
Xiao Ping Xie ◽  
Wei Zhao
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Method ◽  
Impulse Response ◽  
Mathematical Description ◽  
Pulse Width ◽  
Path Loss ◽  
Propagation Model ◽  
Line Of Sight ◽  
Non Line Of Sight

A multi-scatter propagation model based on Monte Carlo method is presented. This model can be applied to all the geometries, including coplanar or noncoplanar scenario. The mathematical description of this model is deduced. We obtain the spatial positions of photon with three Cartesian coordinates after each propagation step and the received judgment conditions. Employing a photon tracing technique, Monte Carlo simulation is performed to investigate the signal impulse response and the path loss. The results indicate that, when the off-axis angle increases, the amplitude of the impulse response decreases, while the path loss increases. In addition, it is observed that the pulse width increases with the off-axis angle.

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