Monte Carlo simulations of electron transport properties of diamond in high electric fields using full band structure

2004 ◽  
Vol 95 (9) ◽  
pp. 4866-4874 ◽  
Author(s):  
Tomokatsu Watanabe ◽  
Tokuyuki Teraji ◽  
Toshimichi Ito ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Band Structure ◽  
Monte Carlo Simulations ◽  
Transport Properties ◽  
Electric Fields ◽  
Full Band ◽  
Electron Transport Properties ◽  
High Electric Fields ◽  
Full Band Structure

Five-valley model for the study of electron transport properties at very high electric fields in GaAs

1991 ◽  
Vol 6 (9) ◽  
pp. 862-871 ◽  
Author(s):  
T Gonzalez Sanchez ◽  
J E Velazquez Perez ◽  
P M Gutierrez Conde ◽  
D Pardo Collantes
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Electric Fields ◽  
Electron Transport Properties ◽  
High Electric Fields ◽  
Very High

scholarly journals Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

2021 ◽  
Author(s):  
Janusz Wozny ◽  
Andrii Kovalchuk ◽  
Zbigniew Lisik ◽  
Jacek Podgorski ◽  
Piotr Bugalski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Electric Fields ◽  
Density Of States ◽  
Electron Mobility ◽  
Crucial Issue ◽  
Calculated Density ◽  
Correct Calculation

AbstractWe carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical efficiency of the DOS calculation. We investigate the scaling efficiency when different numbers of cores are used.

TEMPERATURE DEPENDENCE OF HIGH FIELD ELECTRON TRANSPORT PROPERTIES IN WURTZITE PHASE GaN FOR DEVICE MODELING

2008 ◽  
Vol 22 (22) ◽  
pp. 3915-3922 ◽  
Author(s):  
A. R. BINESH ◽  
H. ARABSHAHI ◽  
G. R. EBRAHIMI ◽  
M. REZAEE ROKN-ABADI
Keyword(s):  
Electron Transport ◽  
Electric Fields ◽  
Dominant Role ◽  
Electron Velocity ◽  
Differential Conductance ◽  
Device Modeling ◽  
Wurtzite Phase ◽  
Ensemble Monte Carlo ◽  
Electron Transport Properties ◽  
High Electric Fields

An ensemble Monte Carlo simulation has been used to model bulk electron transport at room and higher temperatures as a function of high electric fields. Electronic states within the conduction band valleys at the Γ1, U, M, Γ3 and K are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in GaN in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in GaN is less sensitive to temperature than in other III-V semiconductors like GaAs . So GaN devices are expected to be more tolerant to self-heating and high ambient temperature device modeling. Our steady state velocity-field characteristics are in fair agreement with other recent calculations.

Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

2004 ◽  
Vol 19 (4) ◽  
pp. S206-S208 ◽  
Author(s):  
Niels Fitzer ◽  
Angelika Kuligk ◽  
Ronald Redmer ◽  
Martin Städele ◽  
Stephen M Goodnick ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Band Gap ◽  
High Field ◽  
Wide Band ◽  
Wide Band Gap ◽  
Field Electron ◽  
Full Band ◽  
Wide Band Gap Semiconductors
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