A Full-Band Spherical Harmonics Expansion of the Valence Bands up to High Energies

2006 ◽  
Author(s):  
A. Pham ◽  
C. Jungemann ◽  
B. Meinerzhagen
Keyword(s):  
Spherical Harmonics ◽  
High Energies ◽  
Full Band ◽  
Spherical Harmonics Expansion ◽  
Valence Bands

scholarly journals Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 361-365 ◽  
Author(s):  
Susanna Reggiani ◽  
Maria Cristina Vecchi ◽  
Massimo Rudan
Keyword(s):  
Temperature Dependence ◽  
Spherical Harmonics ◽  
Hole Mobility ◽  
Scattering Mechanisms ◽  
Mobility Data ◽  
Number Of Factors ◽  
Wide Range ◽  
Full Band ◽  
Spherical Harmonics Expansion ◽  
Full Band Structure

By adopting the solution method for the BTE based on the spherical-harmonics expansion (SHE) [1], and using the full-band structure for both the electron and valence band of silicon [2], the temperature dependence of a number of scattering mechanisms has been modeled and implemented into the code HARM performing the SHE solution. Comparisons with the experimental mobility data show agreement over a wide range of temperatures. The analysis points out a number of factors from which the difficulties encountered in earlier investigations seemingly originate, particularly in the case of hole mobility.

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