Hot-carrier degradation and oxide charge build-up in self-aligned etched-polysilicon npn bipolar transistors

A. Neviani; P. Pavan; A. Nardi; A. Chantre; L. Vendrame; E. Zanoni

doi:10.1109/16.641384

Hot-carrier degradation and oxide charge build-up in self-aligned etched-polysilicon npn bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.641384 ◽

1997 ◽

Vol 44 (11) ◽

pp. 2059-2063 ◽

Cited By ~ 6

Author(s):

A. Neviani ◽

P. Pavan ◽

A. Nardi ◽

A. Chantre ◽

L. Vendrame ◽

...

Keyword(s):

Bipolar Transistors ◽

Oxide Charge ◽

Hot Carrier ◽

Hot Carrier Degradation

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Time-Dependent Hot Carrier Degradation in Polysilicon Emitter Bipolar Transistors Under High Current and Radiation Combined Stress

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3097695 ◽

2021 ◽

pp. 1-6

Author(s):

Peijian Zhang ◽

Zicheng Xu ◽

Tao Wang ◽

Wensuo Chen ◽

Min Hong ◽

...

Keyword(s):

Bipolar Transistors ◽

Time Dependent ◽

High Current ◽

Combined Stress ◽

Hot Carrier ◽

Polysilicon Emitter ◽

Hot Carrier Degradation

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Positive oxide-charge generation during 0.25 /spl mu/m PMOSFET hot-carrier degradation

IEEE Electron Device Letters ◽

10.1109/55.320990 ◽

1994 ◽

Vol 15 (10) ◽

pp. 427-429 ◽

Cited By ~ 11

Author(s):

R. Woltjer ◽

G.M. Paulzen ◽

H. Lifka ◽

P. Woerlee

Keyword(s):

Charge Generation ◽

Oxide Charge ◽

Hot Carrier ◽

Hot Carrier Degradation

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Oxide-charge generation during hot-carrier degradation of PMOSTs

Proceedings of IEEE International Electron Devices Meeting ◽

10.1109/iedm.1993.347213 ◽

2002 ◽

Cited By ~ 2

Author(s):

R. Woltjer ◽

G.M. Paulzen

Keyword(s):

Charge Generation ◽

Oxide Charge ◽

Hot Carrier ◽

Hot Carrier Degradation

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Hot-carrier degradation in bipolar transistors at 300 and 110 K-effect on BiCMOS inverter performance

IEEE Transactions on Electron Devices ◽

10.1109/16.52460 ◽

1990 ◽

Vol 37 (4) ◽

pp. 1171-1173 ◽

Cited By ~ 14

Author(s):

J.D. Burnett ◽

C. Hu

Keyword(s):

Bipolar Transistors ◽

Hot Carrier ◽

Hot Carrier Degradation

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Avalanche current induced hot carrier degradation in 200 GHz SiGe heterojunction bipolar transistors

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197770 ◽

2003 ◽

Cited By ~ 18

Author(s):

Zhijian Yang ◽

F. Guarin ◽

E. Hostetter ◽

G. Freeman

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Hot Carrier ◽

Hot Carrier Degradation

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A unified approach for hot-carrier degradation of current gain and 1/f noise of polysilicon emitter bipolar transistors

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1997.647406 ◽

2002 ◽

Cited By ~ 2

Author(s):

S. Decoutere ◽

E. Simoen ◽

G. Vancuyck ◽

L. Deferm ◽

C. Claeys

Keyword(s):

Bipolar Transistors ◽

Current Gain ◽

Unified Approach ◽

Hot Carrier ◽

Polysilicon Emitter ◽

Hot Carrier Degradation

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Modeling of oxide-charge generation during hot-carrier degradation of PMOSFET's

IEEE Transactions on Electron Devices ◽

10.1109/16.310118 ◽

1994 ◽

Vol 41 (9) ◽

pp. 1639-1644 ◽

Cited By ~ 14

Author(s):

R. Woltjer ◽

G.M. Paulzen

Keyword(s):

Charge Generation ◽

Oxide Charge ◽

Hot Carrier ◽

Hot Carrier Degradation

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Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors

Hot Carrier Degradation in Semiconductor Devices ◽

10.1007/978-3-319-08994-2_13 ◽

2014 ◽

pp. 371-398 ◽

Cited By ~ 4

Author(s):

Partha S. Chakraborty ◽

John D. Cressler

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Bipolar Transistors ◽

Hot Carrier ◽

Hot Carrier Degradation

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Liquid-helium temperature hot-carrier degradation of Si p-channel MOSTs

IEE Proceedings G Circuits Devices and Systems ◽

10.1049/ip-g-2.1993.0069 ◽

1993 ◽

Vol 140 (6) ◽

pp. 431 ◽

Cited By ~ 1

Author(s):

E. Simoen ◽

C. Claeys

Keyword(s):

Liquid Helium ◽

Liquid Helium Temperature ◽

Helium Temperature ◽

Hot Carrier ◽

Hot Carrier Degradation

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ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19884136 ◽

1988 ◽

Vol 49 (C4) ◽

pp. C4-651-C4-655 ◽

Cited By ~ 2

Author(s):

R. BELLENS ◽

P. HEREMANS ◽

G. GROESENEKEN ◽

H. E. MAES

Keyword(s):

Mos Transistors ◽

Charge Pumping ◽

Hot Carrier ◽

Hot Carrier Degradation

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