Comments on "The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors" [with reply]

1992 ◽  
Vol 39 (2) ◽  
pp. 458-464 ◽  
Author(s):  
P. Heremans ◽  
R. Bellens ◽  
G. Groeseneken ◽  
H.E. Maes
Keyword(s):  
Gate Voltage ◽  
Hole Injection ◽  
Mos Transistors ◽  
Hot Carrier ◽  
Electron And Hole Traps

Hydrogen/Deuterium Interaction With CMOS Transistor Device Structure: Sintering Process Studied by Sims

1998 ◽  
Vol 513 ◽  
Author(s):  
P. J. Chen ◽  
R. M. Wallace
Keyword(s):  
Interfacial Region ◽  
Sintering Process ◽  
Dangling Bond ◽  
Mos Transistors ◽  
Hot Carriers ◽  
Device Structure ◽  
Hot Carrier ◽  
Cmos Transistor ◽  
Hydrogen Deuterium

ABSTRACTPassivation of the SiO2-Si interface by hydrogen/deuterium in MOS transistors serve to ensure their operating reliability against channel hot carriers. Physical characterization of device sintering process in deuterated forming gas (10%D2:90%N2) is carried out by dynamic SIMS on planar CMOS gate stack structures, in conjunction with device hot carrier electrical testing. It is found that incorporation of deuterium in the doped poly-Si/SiO2/Si interfacial region readily occurs under typical post-metallization sintering conditions, demonstrating that transport of deuterium through CMOS gate is an effective pathway in an encapsulated device structure with silicon nitride sidewalls. The measured Si-D areal densities in the interfacial region depend on gate poly-Si doping type, but in both cases, appear to be sufficient to achieve complete interface Si dangling bond (˜1012 cm−2) passivation for the SiO2-Si system.

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

CHARACTERIZATION OF A SURFACE-CHARGE MODULATION ELECTROFLUIDIC TRANSISTOR BY HYDRODYNAMIC MEASUREMENTS

2012 ◽  
Vol 11 (04) ◽  
pp. 1240021
Author(s):  
GUILLAUME LAFFITE ◽  
XU ZHENG ◽  
LOUIS RENAUD ◽  
FRANÇOIS BESSUEILLE ◽  
ELISABETH CHARLAIX ◽  
...  
Keyword(s):  
Experimental Study ◽  
Zeta Potential ◽  
Surface Charge ◽  
Gate Voltage ◽  
Silica Surface ◽  
Insulating Layer ◽  
Charge Regulation ◽  
Charge Modulation ◽  
Gating Effect

We present an experimental study on the electrofluidic transistor in this paper. A novel and easy way to integrate the transistor into a microchannel is developed. The performances of the insulating layer, especially the leakage current under gate voltage, are carefully characterized. The change of surface charge on silica surface by gate polarization is measured, however, by measuring the streaming current, the gating effect on zeta potential has not been observed. This result should imply new assumption in the understanding of the charge regulation in the electrical double layer under gate polarization.

Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

2018 ◽  
Vol 33 (12) ◽  
pp. 125019
Author(s):  
Yen-Lin Tsai ◽  
Jone F Chen ◽  
Shang-Feng Shen ◽  
Hao-Tang Hsu ◽  
Chia-Yu Kao ◽  
...  
Keyword(s):  
High Voltage ◽  
Drift Region ◽  
Mos Transistors ◽  
Hot Carrier

scholarly journals Characterization of hot-hole injection induced SILC and related disturbs in flash memories

2001 ◽  
Vol 48 (2) ◽  
pp. 300-306 ◽  
Author(s):  
Cherng-Ming Yih ◽  
Zhi-Hao Ho ◽  
Mong-Song Liang ◽  
S.S. Chung
Keyword(s):  
Hole Injection ◽  
Flash Memories
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