scholarly journals Characterization of hot-hole injection induced SILC and related disturbs in flash memories

2001 ◽  
Vol 48 (2) ◽  
pp. 300-306 ◽  
Author(s):  
Cherng-Ming Yih ◽  
Zhi-Hao Ho ◽  
Mong-Song Liang ◽  
S.S. Chung
Keyword(s):  
Hole Injection ◽  
Flash Memories

Modeling Carrier Transport in Oxide-Passivated Nanocrystalline Silicon Leds

2000 ◽  
Vol 638 ◽  
Author(s):  
Karl D. Hirschman ◽  
Philippe M. Fauchet
Keyword(s):  
Density Of States ◽  
Carrier Transport ◽  
Light Emission ◽  
Transport Model ◽  
Glass Structure ◽  
Electrical Characterization ◽  
Nanocrystalline Silicon ◽  
Hole Injection ◽  
Device Operation

AbstractThis report presents an investigation on carrier transport in LED structures based on oxide passivated nanocrystalline silicon (OPNSi), formed by oxidation of porous silicon. This material, like its precursor, can luminesce quite efficiently while demonstrating several advantages in stability (i.e. chemical, thermal, electrical and electroluminescence). OPNSi can be best described as a porous glass structure with defects that facilitate transport, and remaining embedded nanocrystals of silicon that support light emission. Although this study does not provide a direct measurement of the density of states in OPNSi, the following transport study suggests a high density of states having a broad energy distribution that readily exchange charge with the silicon electrodes. Experimental data also suggests the existence of deeper trap centers that do not facilitate transport, yet influence transport behavior significantly. The device operation is explained by bipolar injection from an electron-injection cathode and a hole-injection anode into the semi-insulating OPNSi layer. The device is modeled as a “field effect diode”, where untraditional concepts are applied in the interpretation of experimental observations. Extensive electrical characterization of OPNSi LEDs has lead to the development of a comprehensive transport model that is self-consistent with all experimental observations.

Nanocrystal Memory Device Utilizing GaN Quantum Dots by RF MBE

2010 ◽  
Vol 1250 ◽  
Author(s):  
Panagiotis Dimitrakis ◽  
Eleftherios Iliopoulos ◽  
Pascal Normand
Keyword(s):  
Electrical Characterization ◽  
Energy Band Diagram ◽  
Memory Device ◽  
Hole Injection ◽  
Mos Devices ◽  
Molecular Beam Deposition ◽  
Frequency Plasma ◽  
Nanocrystal Memory ◽  
Beam Deposition

AbstractThe growth of GaN-QDs by radio frequency plasma assisted molecular beam deposition (RF-MBD) on thin SiO2 films for non-volatile memories (NVM) applications is demonstrated. Thermal budget modification during the deposition allows tuning of the size and density of the QDs. Preliminary electrical characterization of GaN-QD MOS devices reveals efficient electron injection at very low voltages from the Si accumulation layer to the QDs. The observed limitation in hole injection relates adequately to the energy band diagram of the structure.

Suppression of Hole Injection into the Tunnel Oxides of Flash Memories

1997 ◽  
Author(s):  
Yutaka Okuyama ◽  
Takashi Kobayashi ◽  
Katsutaka Kimura
Keyword(s):  
Hole Injection ◽  
Flash Memories ◽  
Tunnel Oxides

Characterization of the Degradation Processes in SiO2-Si Structure by Means of Electrolyte-Insulating-Semiconductor Systems

1993 ◽  
Vol 309 ◽  
Author(s):  
S.A. Bota ◽  
J.R. Morante ◽  
A.P. Baraban ◽  
V.V. Bulavinov ◽  
P.P. Konorov
Keyword(s):  
Electric Field ◽  
Hole Injection ◽  
Insulating Layer ◽  
Oxide Breakdown ◽  
Structure Degradation ◽  
Injection Zone ◽  
The Stability ◽  
Non Destructive

AbstractA non destructive method to characterize the properties of SiO2 films in SiO2-Si structures and analyze their variations under different external actions is presented and discussed. The method is based on the properties of the Electrolyte-SiO2 contact under polarization which allows us to study the SiO2 film in different injection conditions, in a hole injection zone, in a predominant electron injection zone, and finally, in a region of electron heating as a result of the electric field action before to reach the oxide breakdown. Moreover, using this method, higher electric field values than in the metal-SiO2-Si system can be applied.The characterization of hole traps, electron traps and defect precursors states in SiO2 films are carried out as well as their evolution and influence on the SiO2-Si structure degradation and electrical behaviour. Results measured on SiO2-Si structures obtained from different technological processes and submitted to different treatments are reported in order to discuss the possibilities of this method as a power tool to assess the stability and quality of insulating layer on semiconductors.

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