Role of dopant incorporation in low-temperature Si epitaxial growth by rapid thermal processing chemical vapor deposition

1992 ◽  
Vol 39 (1) ◽  
pp. 203-205 ◽  
Author(s):  
T.Y. Hsieh ◽  
K.H. Jung ◽  
D.L. Kwong ◽  
C.J. Hitzman ◽  
R. Brennan
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Dopant Incorporation

Dopant Enhanced Low-Temperature Epitaxial Growth by Rapid Thermal Processing Chemical Vapor Deposition

1991 ◽  
Vol 220 ◽  
Author(s):  
T. Y. Hsieh ◽  
K. H. Jung ◽  
D. L. Kwong
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Defect Formation ◽  
Defect Density ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Carrier Distribution ◽  
Dopant Incorporation

ABSTRACTWe have demonstrated, for the first time, that the epitaxial growth temperature can be lowered by dopant incorporation using rapid thermal processing chemical vapor deposition (RTPCVD). Heavily arsenic-doped epitaxial layers with very abrupt dopant transition profiles and relative uniform carrier distribution have been achieved at 800°C. The defect formation is closely related to dopant concentration; the defect density as a function of carrier concentration shows a sharp transition at about 3×1018 cm−3.

Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 240-246 ◽  
Author(s):  
Tz-Guei Jung ◽  
Chun-Yen Chang ◽  
Ting-Chang Chang ◽  
Horng-Chih Lin ◽  
Tom Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Germanium Alloy
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