Selective epitaxial growth with oxide‐polycrystalline silicon‐oxide masks by rapid thermal processing chemical vapor deposition

1990 ◽  
Vol 57 (9) ◽  
pp. 872-874 ◽  
Author(s):  
T. Y. Hsieh ◽  
K. H. Jung ◽  
D. L. Kwong ◽  
D. B. Spratt
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Silicon Oxide ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Selective Epitaxial Growth

Dopant Enhanced Low-Temperature Epitaxial Growth by Rapid Thermal Processing Chemical Vapor Deposition

1991 ◽  
Vol 220 ◽  
Author(s):  
T. Y. Hsieh ◽  
K. H. Jung ◽  
D. L. Kwong
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Defect Formation ◽  
Defect Density ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Carrier Distribution ◽  
Dopant Incorporation

ABSTRACTWe have demonstrated, for the first time, that the epitaxial growth temperature can be lowered by dopant incorporation using rapid thermal processing chemical vapor deposition (RTPCVD). Heavily arsenic-doped epitaxial layers with very abrupt dopant transition profiles and relative uniform carrier distribution have been achieved at 800°C. The defect formation is closely related to dopant concentration; the defect density as a function of carrier concentration shows a sharp transition at about 3×1018 cm−3.

Selective epitaxial growth of Ge 1−x Sn x on Si by using metal-organic chemical vapor deposition

2017 ◽  
Vol 468 ◽  
pp. 614-619 ◽  
Author(s):  
Tomoya Washizu ◽  
Shinichi Ike ◽  
Yuki Inuzuka ◽  
Wakana Takeuchi ◽  
Osamu Nakatsuka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Selective Epitaxial Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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