CHARACTERIZATION OF SUBMICROMETER GaAs MESFET USING DRIFT‐DIFFUSION SIMULATOR

1993 ◽  
Vol 12 (4) ◽  
pp. 361-375
Author(s):  
Hamid Z. Fardi
Keyword(s):  
Drift Diffusion ◽  
Gaas Mesfet

PERFORMANCE LIMITS OF SIMULATION MODELS FOR NOISE CHARACTERIZATION OF MM WAVE DEVICES

2007 ◽  
Vol 07 (03) ◽  
pp. L299-L312
Author(s):  
ALI ABOU-ELNOUR
Keyword(s):  
Boltzmann Transport Equation ◽  
Simulation Models ◽  
Two Dimensions ◽  
Boltzmann Transport ◽  
Performance Limits ◽  
Drift Diffusion ◽  
Model Equations ◽  
Accuracy Of Results ◽  
Noise Characterization

Based on Boltzmann transport equation, the drift-diffusion, hydrodynamic, and Monte-Carlo physical simulators are accurately developed. For each simulator, the model equations are self-consistently solved with Poisson equation, and with Schrödinger equation when quantization effects take place, in one and two-dimensions to characterize the operation and optimize the structure of mm-wave devices. The effects of the device dimensions, biasing conditions, and operating frequencies on the accuracy of results obtained from the simulators are thoroughly investigated. Based on physical understanding of the models, the simulation results are analyzed to fully determine the limits at which a certain device simulator can be accurately and efficiently used to characterize the noise behavior of mm-wave devices.

Characterization of Device Isolation in GaAs MESFET Circuits by Boron Implantation

1987 ◽  
Vol 134 (3) ◽  
pp. 711-714 ◽  
Author(s):  
F. Clauwaert ◽  
P. Van Daele ◽  
R. Baets ◽  
P. Lagasse
Keyword(s):  
Gaas Mesfet ◽  
Boron Implantation

Characterization of thermal and frequency-dispersion effects in GaAs MESFET devices

2001 ◽  
Vol 49 (7) ◽  
pp. 1352-1355 ◽  
Author(s):  
J. Rodriguez-Tellez ◽  
T. Fernandez ◽  
A. Mediavilla ◽  
A. Tazon
Keyword(s):  
Frequency Dispersion ◽  
Gaas Mesfet ◽  
Dispersion Effects

Characterization of the transient behavior of a GaAs MESFET using dynamic I-V and S-parameter measurements

1996 ◽  
Vol 45 (1) ◽  
pp. 231-237 ◽  
Author(s):  
M. Begin ◽  
F.M. Ghannouchi ◽  
F. Beauregard ◽  
L. Selmi ◽  
B. Ricco
Keyword(s):  
Transient Behavior ◽  
Gaas Mesfet ◽  
S Parameter

scholarly journals Brain network segregation and integration during an epoch-related working memory fMRI experiment

2018 ◽  
Author(s):  
Peter Fransson ◽  
Björn C. Schiffler ◽  
William Hedley Thompson
Keyword(s):  
Working Memory ◽  
Brain Network ◽  
High Temporal Resolution ◽  
Imaging Data ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Point Estimates ◽  
Fmri Experiment ◽  
Temporal Profiles

AbstractThe characterization of brain subnetwork segregation and integration has previously focused on changes that are detectable at the level of entire sessions or epochs of imaging data. In this study, we applied time-varying functional connectivity analysis together with temporal network theory to calculate point-by-point estimates in subnetwork segregation and integration during an epoch-based (2-back, 0-back, baseline) working memory fMRI experiment as well as during resting-state. This approach allowed us to follow task-related changes in subnetwork segregation and integration at a high temporal resolution. At a global level, the cognitively more taxing 2-back epochs elicited an overall stronger response of integration between subnetworks compared to the 0-back epochs. Moreover, the visual and fronto-parietal subnetworks displayed characteristic and distinct temporal profiles of segregation and integration during the 0- and 2-back epochs. During the interspersed epochs of baseline, many subnetworks, including the default mode, visual, fronto-parietal, cingulo-opercular and dorsal attention subnetworks showed pronounced increases in segregation. Using a drift diffusion model we show that the response time for the 2-back trials are correlated with integration for the fronto-parietal subnetwork and correlated with segregation for the visual subnetwork. Our results elucidate the fast-evolving events with regard to subnetwork integration and segregation that occur in an epoch-related task fMRI experiment. Our findings suggest that minute changes in subnetwork integration are of importance for task performance.

Characterization of GaAs MESFET gate capacitances

10.1109/4.335 ◽  
1988 ◽  
Vol 23 (3) ◽  
pp. 878-880 ◽  
Author(s):  
C.-C. Shih ◽  
B.J. Sheu ◽  
H.M. Le
Keyword(s):  
Gaas Mesfet

Characterization of the frequency dispersion of transconductance and drain conductance of GaAs MESFET

2003 ◽  
Vol 50 (10) ◽  
pp. 2032-2038 ◽  
Author(s):  
Y. Hasumi ◽  
N. Matsunaga ◽  
T. Oshima ◽  
H. Kodera
Keyword(s):  
Frequency Dispersion ◽  
Gaas Mesfet ◽  
Drain Conductance
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