Influence of Thermal Barriers on Heat Flow in High Quality Chemical Vapor Deposited Diamond

1998 ◽  
Vol 80 (1) ◽  
pp. 117-120 ◽  
Author(s):  
J. Hartmann ◽  
M. Costello ◽  
M. Reichling
Keyword(s):  
Heat Flow ◽  
Chemical Vapor ◽  
High Quality ◽  
Thermal Barriers ◽  
Chemical Vapor Deposited

High-quality graphene transfer via directional etching of metal substrates

Nanoscale ◽  
2019 ◽  
Vol 11 (34) ◽  
pp. 16001-16006 ◽  
Author(s):  
Xuewei Zhang ◽  
Zehao Wu ◽  
Haoran Zheng ◽  
Qiancheng Ren ◽  
Zhenxing Zou ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
High Quality ◽  
Metal Substrates ◽  
Cu Substrate ◽  
Chemical Vapor Deposited ◽  
Graphene Transfer

The quality of chemical-vapor-deposited graphene can be significantly improved by directional removal of the underlying Cu substrate.

scholarly journals High-quality AlN films grown on chemical vapor-deposited graphene films

2016 ◽  
Vol 60 ◽  
pp. 01004
Author(s):  
Bin-Hao Chen ◽  
Hsiu-Hao Hsu ◽  
David T.W. Lin
Keyword(s):  
Chemical Vapor ◽  
High Quality ◽  
Graphene Films ◽  
Chemical Vapor Deposited

scholarly journals Probing electronic lifetimes and phonon anharmonicities in high-quality chemical vapor deposited graphene by magneto-Raman spectroscopy

2015 ◽  
Vol 107 (23) ◽  
pp. 233105 ◽  
Author(s):  
Christoph Neumann ◽  
Donatus Halpaap ◽  
Sven Reichardt ◽  
Luca Banszerus ◽  
Michael Schmitz ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor ◽  
High Quality ◽  
Chemical Vapor Deposited

scholarly journals High-quality GaN films grown on chemical vapor-deposited graphene films

2012 ◽  
Vol 4 (9) ◽  
pp. e24-e24 ◽  
Author(s):  
Kunook Chung ◽  
Suk In Park ◽  
Hyeonjun Baek ◽  
Jin-Seok Chung ◽  
Gyu-Chul Yi
Keyword(s):  
Chemical Vapor ◽  
High Quality ◽  
Graphene Films ◽  
Chemical Vapor Deposited

High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon

2000 ◽  
Vol 266-269 ◽  
pp. 141-145 ◽  
Author(s):  
R Rogel ◽  
M Sarret ◽  
T Mohammed-Brahim ◽  
O Bonnaud ◽  
J.P Kleider
Keyword(s):  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

High-quality ultrathin chemical-vapor-deposited Ta2O5 capacitors prepared by high-density plasma annealing

2004 ◽  
Vol 106 (3) ◽  
pp. 234-241 ◽  
Author(s):  
C.H Liu ◽  
S.J Chang ◽  
J.F Chen ◽  
S.C Chen ◽  
J.S Lee ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
High Density ◽  
High Quality ◽  
Chemical Vapor Deposited ◽  
Plasma Annealing ◽  
Density Plasma
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