High quality thin gate oxide prepared by annealing low‐pressure chemical vapor deposited SiO2in N2O

1991 ◽  
Vol 59 (3) ◽  
pp. 283-285 ◽  
Author(s):  
J. Ahn ◽  
W. Ting ◽  
T. Chu ◽  
S. Lin ◽  
D. L. Kwong
Keyword(s):  
Chemical Vapor ◽  
Gate Oxide ◽  
Low Pressure ◽  
High Quality ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Thin Gate Oxide

High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon

2000 ◽  
Vol 266-269 ◽  
pp. 141-145 ◽  
Author(s):  
R Rogel ◽  
M Sarret ◽  
T Mohammed-Brahim ◽  
O Bonnaud ◽  
J.P Kleider
Keyword(s):  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

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