Abnormal current increases induced under high electric fields in asymmetrical graphite-intrinsic-diamond-graphite structures fabricated with high-quality homoepitaxial chemical-vapor-deposited diamond layers

2010 ◽  
Vol 107 (6) ◽  
pp. 063708
Author(s):  
Mitsuhiro Hamada ◽  
Tokuyuki Teraji ◽  
Toshimichi Ito
Keyword(s):  
Electric Fields ◽  
Chemical Vapor ◽  
High Quality ◽  
Chemical Vapor Deposited ◽  
High Electric Fields

High-quality graphene transfer via directional etching of metal substrates

Nanoscale ◽  
2019 ◽  
Vol 11 (34) ◽  
pp. 16001-16006 ◽  
Author(s):  
Xuewei Zhang ◽  
Zehao Wu ◽  
Haoran Zheng ◽  
Qiancheng Ren ◽  
Zhenxing Zou ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
High Quality ◽  
Metal Substrates ◽  
Cu Substrate ◽  
Chemical Vapor Deposited ◽  
Graphene Transfer

The quality of chemical-vapor-deposited graphene can be significantly improved by directional removal of the underlying Cu substrate.

scholarly journals High-quality AlN films grown on chemical vapor-deposited graphene films

2016 ◽  
Vol 60 ◽  
pp. 01004
Author(s):  
Bin-Hao Chen ◽  
Hsiu-Hao Hsu ◽  
David T.W. Lin
Keyword(s):  
Chemical Vapor ◽  
High Quality ◽  
Graphene Films ◽  
Chemical Vapor Deposited

Anodic Oxidation of Nitrogen-Added Al-Based Alloys for Thin-Film Transistors

1997 ◽  
Vol 500 ◽  
Author(s):  
Toshiaki Arai ◽  
Hideo Iiyori
Keyword(s):  
Thin Film ◽  
Nitrogen Content ◽  
Electric Fields ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Nitrogen Addition ◽  
Anodized Aluminum ◽  
Leakage Currents ◽  
Current Leakage ◽  
Chemical Vapor Deposited

ABSTRACTNovel anodized films of nitrogen-added aluminum-based alloys were proposed for use in the fabrication of gate insulators for thin-film transistors, and the effect of nitrogen addition on the anodized aluminum-based alloys was investigated. Gadolinium and neodymium were employed as alternative alloy components. The film thickness, the dielectric constant, and the roughness average of the anodized films decreased as the nitrogen content increased, and the nitrogen content was required to be lower than 20 at.%. The most improved values of the breakdown electric fields of anodized aluminum-gadolinium and aluminum-neodymium alloy were 10.1 MV/cm with 6.0 at.% nitrogen content and 9.9 MV/cm with 4.0 at.% nitrogen content, respectively. The leakage currents of the anodized films under a negative bias, which could not be suppressed by high-temperature annealing, were adequately suppressed by nitrogen addition, especially in anodized aluminum-gadolinium alloy. The current leakage of the anodized aluminum-gadolinium alloy with 6.0 at.% nitrogen content became -8E-13 A at -10 V and 150°C. This value is nearly equal to that of chemical-vapor-deposited (CVD) films.

scholarly journals Probing electronic lifetimes and phonon anharmonicities in high-quality chemical vapor deposited graphene by magneto-Raman spectroscopy

2015 ◽  
Vol 107 (23) ◽  
pp. 233105 ◽  
Author(s):  
Christoph Neumann ◽  
Donatus Halpaap ◽  
Sven Reichardt ◽  
Luca Banszerus ◽  
Michael Schmitz ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor ◽  
High Quality ◽  
Chemical Vapor Deposited

scholarly journals Studies of field emission process influence on changes in CNT films with different CNT superficial density

2018 ◽  
Vol 36 (1) ◽  
pp. 27-33
Author(s):  
Izabela Stępińska ◽  
Elżbieta Czerwosz ◽  
Mirosław Kozłowski ◽  
Halina Wronka ◽  
Piotr Dłużewski
Keyword(s):  
Field Emission ◽  
Electric Fields ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Destructive Effect ◽  
Electric Power Supply ◽  
Cold Cathodes ◽  
High Electric Fields ◽  
The Impact

Abstract Field emission from materials at high electric fields can be associated with unfavorable or even destructive effect on the surface of the investigated cathode. The impact of high voltage electric power supply causes locally very strong electric fields focusing on the cathode surface. It causes a number of phenomena, which can adversely affect the morphology and the structure of the cathode material. Such a phenomenon is, for example, peeling of an emissive layer from the substrate or its burnout. It results in tearing of the layer and a decrease or loss of its ability to electrons emission. The cold cathodes in a form of CNT films with various CNTs superficial distribution are obtained by physical vapor deposition followed by chemical vapor deposition. CNTs are catalyzed in pyrolytic process with xylene (CVD), by Ni in a form of nanograins (few nm in size) placed in carbonaceous matrix. These films are built of emissive CNTs - carbonaceous film deposited on different substrates. In this work, the morphology and topography of superficial changes resulting from external electric field in such films were investigated.

scholarly journals High-quality GaN films grown on chemical vapor-deposited graphene films

2012 ◽  
Vol 4 (9) ◽  
pp. e24-e24 ◽  
Author(s):  
Kunook Chung ◽  
Suk In Park ◽  
Hyeonjun Baek ◽  
Jin-Seok Chung ◽  
Gyu-Chul Yi
Keyword(s):  
Chemical Vapor ◽  
High Quality ◽  
Graphene Films ◽  
Chemical Vapor Deposited

High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon

2000 ◽  
Vol 266-269 ◽  
pp. 141-145 ◽  
Author(s):  
R Rogel ◽  
M Sarret ◽  
T Mohammed-Brahim ◽  
O Bonnaud ◽  
J.P Kleider
Keyword(s):  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical
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