High Quality Plasma‐Enhanced Chemical Vapor Deposited Silicon Nitride Films

1993 ◽  
Vol 140 (7) ◽  
pp. 2071-2075 ◽  
Author(s):  
Tina J. Cotler ◽  
Jonathan Chapple‐Sokol
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapor ◽  
High Quality ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited

Diffusion of hydrogen in low‐pressure chemical vapor deposited silicon nitride films

1990 ◽  
Vol 56 (25) ◽  
pp. 2530-2532 ◽  
Author(s):  
W. M. Arnold Bik ◽  
R. N. H. Linssen ◽  
F. H. P. M. Habraken ◽  
W. F. van der Weg ◽  
A. E. T. Kuiper
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Diffusion Of Hydrogen

Positron annihilation study of low pressure chemical vapor deposited silicon nitride films

1991 ◽  
Vol 59 (14) ◽  
pp. 1687-1689 ◽  
Author(s):  
R. A. Hakvoort ◽  
H. Schut ◽  
A. van Veen ◽  
W. M. Arnold Bik ◽  
F. H. P. M. Habraken
Keyword(s):  
Silicon Nitride ◽  
Positron Annihilation ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Positron Annihilation Study

High-quality hydrogen-diluted a-SiNx:H films deposited by hot-wire chemical vapor deposition

2004 ◽  
Vol 808 ◽  
Author(s):  
Fengzhen Liu ◽  
Lynn Gedvilas ◽  
Brian Keyes ◽  
Errol Sanchez ◽  
Shulin Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Surface Coverage ◽  
Chemical Vapor ◽  
Breakdown Field ◽  
Hot Wire ◽  
High Quality ◽  
Silicon Nitride Films ◽  
Gas Ratio

ABSTRACTWe have studied the effect of H dilution on silicon nitride films deposited by the hot-wire chemical vapor deposition (HWCVD) technique using SiH4, NH3, and H2 gases. We found that H dilution significantly enhances the properties at silicon nitride films. The N content in the film increases by more than 2 times compared to the film without dilution, based on FTIR measurements. As a result, we can achieve high-quality a-SiNx:H films at low substrate temperature using a much lower gas ratio of NH3/SiH4(∼1) compared to a ratio of about 100 for conventional deposition by HWCVD. We also found that dilution decreases the H content in the films. More importantly, diluted SiNx films are conformal. Scanning electron microscopy measurements show a nearly 100% surface coverage over a sharp object. Electric breakdown measurement shows a well-insulated film with more then a few MV/cm for the breakdown field.

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