Interface Strain and the Valence Band Offset at the Lattice Matched In0.53Ga0.47As/InP (001) Interface
Keyword(s):
X Ray
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ABSTRACTTotal energy minimization calculations show that the interface bonds are strained in nominally lattice matched In0.53 Ga0.47As/InP (001) heterostructures, in agreement with recent X-ray measurements. Anion intermixing relieves the interface strain. The calculated valence band offset varies with the interface bond lengths so the minimum energy structure must be used for a given composition. Then the calculated offset is independent of composition and is in good agreement with experiment. A simple model exhibits the qualitative features revealed by these calculations.
2010 ◽
Vol 150
(41-42)
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pp. 1991-1994
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Keyword(s):
2010 ◽
Vol 27
(6)
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pp. 067302
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Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy
2010 ◽
Vol 256
(23)
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pp. 7327-7330
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Keyword(s):
X Ray
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