Role of initial nucleation in molecular-beam epitaxy of GaN on lattice-matched ZrB2 substrates

2005 ◽  
Vol 2 (7) ◽  
pp. 2191-2194 ◽  
Author(s):  
R. Armitage ◽  
J. Suda ◽  
T. Kimoto
2021 ◽  
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Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.


1997 ◽  
Vol 175-176 ◽  
pp. 1270-1277 ◽  
Author(s):  
Z.R. Wasilewski ◽  
S.J. Rolfe ◽  
R.A. Wilson

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  

1998 ◽  
Vol 83 (4) ◽  
pp. 2266-2271 ◽  
Author(s):  
W. J. Keeler ◽  
G. A. Keeler ◽  
D. A. Harrison ◽  
Z. R. Wasilewski

2020 ◽  
Vol 116 (12) ◽  
pp. 122102 ◽  
Author(s):  
Jiaming Li ◽  
Chenjia Tang ◽  
Peng Du ◽  
Yilan Jiang ◽  
Yong Zhang ◽  
...  

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