Temperature dependence of tunneling magnetoresistance in epitaxial magnetic tunnel junctions using aCo2FeAlHeusler alloy electrode

2010 ◽  
Vol 82 (9) ◽  
Author(s):  
Wenhong Wang ◽  
Hiroaki Sukegawa ◽  
Koichiro Inomata
Keyword(s):  
Temperature Dependence ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Alloy Electrode

scholarly journals Abnormal Temperature Dependence of Tunneling Magnetoresistance for Magnetic Tunnel Junctions

2002 ◽  
Vol 7 (2) ◽  
pp. 59-62
Author(s):  
K.I. Lee ◽  
J.H. Lee ◽  
W.Y. Lee ◽  
K. Rhie ◽  
B.C. Lee ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Abnormal Temperature

Temperature dependence of the energy barrier in X/1X nm shape-anisotropy magnetic tunnel junctions

2021 ◽  
Vol 118 (1) ◽  
pp. 012409
Author(s):  
Junta Igarashi ◽  
Butsurin Jinnai ◽  
Valentin Desbuis ◽  
Stéphane Mangin ◽  
Shunsuke Fukami ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Energy Barrier ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Shape Anisotropy

scholarly journals Surface acoustic wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

2021 ◽  
Vol 130 (3) ◽  
pp. 033901
Author(s):  
Dhritiman Bhattacharya ◽  
Peng Sheng ◽  
Md Ahsanul Abeed ◽  
Zhengyang Zhao ◽  
Hongshi Li ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Wave Induced

MAGNETORESISTANCE IN Fe/MgO/Fe MAGNETIC TUNNEL JUNCTIONS

2007 ◽  
Vol 17 (03) ◽  
pp. 593-598 ◽  
Author(s):  
N. N. BELETSKII ◽  
S. A. BORYSENKO ◽  
V. M. YAKOVENKO ◽  
G. P. BERMAN ◽  
S. A. WOLF
Keyword(s):  
Current Density ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Electron Current ◽  
Ferromagnetic Electrode ◽  
Electron Current Density

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.

Oscillation of giant tunneling magnetoresistance with respect to tunneling barrier thickness in fully epitaxial Fe∕MgO∕Fe magnetic tunnel junctions

2007 ◽  
Vol 90 (25) ◽  
pp. 252506 ◽  
Author(s):  
Rie Matsumoto ◽  
Akio Fukushima ◽  
Taro Nagahama ◽  
Yoshishige Suzuki ◽  
Koji Ando ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Barrier Thickness ◽  
Tunneling Barrier

Ferromagnetic barrier induced large enhancement of tunneling magnetoresistance in van der Waals perpendicular magnetic tunnel junctions

Nanoscale ◽  
2021 ◽  
Author(s):  
Xiaolin Zhang ◽  
Baishun Yang ◽  
Xiaoyan Guo ◽  
Xiufeng Han ◽  
Yu Yan
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Large Enhancement

Schematics of TMR effect of FGT/CrI3/FGT and FGT/ScI3/FGT vdW MTJs.

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