Temperature dependence of the energy barrier in X/1X nm shape-anisotropy magnetic tunnel junctions

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Butsurin Jinnai ◽  
Valentin Desbuis ◽  
Stéphane Mangin ◽  
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...  
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...  

Perpendicular Shape Anisotropy based storage layer offers a bulk anisotropy much more robust against thermal fluctuations than the interfacial anisotropy, allowing to reduce the temperature dependence of the coercivity of sub-20 nm MTJ cells.


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H. Sato ◽  
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H. Ohno

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Eli Christopher I. Enobio ◽  
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R. A. Altman ◽  
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