Effect of annealing on the temperature dependence of inelastic tunneling contributions vis-à-vis tunneling magnetoresistance and barrier parameters in CoFe/MgO/NiFe magnetic tunnel junctions

2014 ◽  
Vol 115 (8) ◽  
pp. 083904 ◽  
Author(s):  
Braj Bhusan Singh ◽  
Sujeet Chaudhary
2002 ◽  
Vol 7 (2) ◽  
pp. 59-62
Author(s):  
K.I. Lee ◽  
J.H. Lee ◽  
W.Y. Lee ◽  
K. Rhie ◽  
B.C. Lee ◽  
...  

2021 ◽  
Vol 118 (1) ◽  
pp. 012409
Author(s):  
Junta Igarashi ◽  
Butsurin Jinnai ◽  
Valentin Desbuis ◽  
Stéphane Mangin ◽  
Shunsuke Fukami ◽  
...  

2021 ◽  
Vol 130 (3) ◽  
pp. 033901
Author(s):  
Dhritiman Bhattacharya ◽  
Peng Sheng ◽  
Md Ahsanul Abeed ◽  
Zhengyang Zhao ◽  
Hongshi Li ◽  
...  

2007 ◽  
Vol 17 (03) ◽  
pp. 593-598 ◽  
Author(s):  
N. N. BELETSKII ◽  
S. A. BORYSENKO ◽  
V. M. YAKOVENKO ◽  
G. P. BERMAN ◽  
S. A. WOLF

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.


2006 ◽  
Vol 99 (8) ◽  
pp. 08T305 ◽  
Author(s):  
Guo-Xing Miao ◽  
Krishna B. Chetry ◽  
Arunava Gupta ◽  
William H. Butler ◽  
Koji Tsunekawa ◽  
...  

2007 ◽  
Vol 90 (25) ◽  
pp. 252506 ◽  
Author(s):  
Rie Matsumoto ◽  
Akio Fukushima ◽  
Taro Nagahama ◽  
Yoshishige Suzuki ◽  
Koji Ando ◽  
...  

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