Anomalously high thermal conductivity of amorphous Si deposited by hot-wire chemical vapor deposition

2010 ◽  
Vol 81 (10) ◽  
Author(s):  
Ho-Soon Yang ◽  
David G. Cahill ◽  
X. Liu ◽  
J. L. Feldman ◽  
R. S. Crandall ◽  
...  
MRS Bulletin ◽  
2001 ◽  
Vol 26 (6) ◽  
pp. 458-463 ◽  
Author(s):  
Jitendra S. Goela ◽  
Nathaniel E. Brese ◽  
Michael A. Pickering ◽  
John E. Graebner

Chemical vapor deposition (CVD) is an attractive method for producing bulk and thin-film materials for a variety of applications. In this method, gaseous reagents condense onto a substrate and then react to produce solid materials. The materials produced by CVD are theoretically dense, highly pure, and have other superior properties.


Author(s):  
M.G. Burke ◽  
R.M. Young ◽  
C.B. Freidhoff ◽  
W.D. Partlow ◽  
H. Buhay

Amorphous refractory materials can be used in a number of optoelectronic applications when fabricated in multilayer structures. When the layers are deposited with very small thicknesses, heterostructures are produced. Such structures have an adjustable optical bandgap because the wavelength of light is much larger than the distance over which the composition of the film varies (layer to layer). Thicker multilayer structures can be fabricated on metallized, high thermal conductivity substrates. The purpose of the structure is to both protect and modify the substrate's properties. Two types of plasma-assisted chemical vapor deposition (PACVD) techniques have been employed to produce these structures.


2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.


2014 ◽  
Vol 68 ◽  
pp. 397-402 ◽  
Author(s):  
Dae Young Jeong ◽  
Kyungmin Kim ◽  
Hee-eun Song ◽  
Jinsoo Song ◽  
Seung Jae Baik ◽  
...  

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