Estimation of near-interface oxide trap density at SiO2/SiC metal-oxide-semiconductor interfaces by transient capacitance measurements at various temperatures

2016 ◽  
Vol 120 (8) ◽  
pp. 085710 ◽  
Author(s):  
Yuki Fujino ◽  
Koji Kita
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Capacitance Measurements ◽  
Semiconductor Interfaces ◽  
Transient Capacitance ◽  
Oxide Trap

scholarly journals Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

2014 ◽  
Vol 104 (13) ◽  
pp. 131605 ◽  
Author(s):  
Thenappan Chidambaram ◽  
Dmitry Veksler ◽  
Shailesh Madisetti ◽  
Andrew Greene ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Hall Method

Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide

2001 ◽  
Vol 693 ◽  
Author(s):  
R. Mehandru ◽  
B.P. Gila ◽  
J. Kim ◽  
J.W. Johnson ◽  
K.P. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Interface Trap Density ◽  
Interface Trap

AbstractGaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl2 based discharges was used to remove Sc2O3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1cm-2was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

Characterization of near-interface traps at 4H-SiC metal–oxide–semiconductor interfaces using modified distributed circuit model

2017 ◽  
Vol 10 (6) ◽  
pp. 064101 ◽  
Author(s):  
Xufang Zhang ◽  
Dai Okamoto ◽  
Tetsuo Hatakeyama ◽  
Mitsuru Sometani ◽  
Shinsuke Harada ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Circuit Model ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Semiconductor Interfaces
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