Evaluation of the Coulomb energy for single‐electron interface trapping in sub‐μm metal‐oxide‐semiconductor field‐effect transistors

H. H. Mueller; D. Wörle; M. Schulz

doi:10.1063/1.356194

Evaluation of the Coulomb energy for single‐electron interface trapping in sub‐μm metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.356194 ◽

1994 ◽

Vol 75 (6) ◽

pp. 2970-2979 ◽

Cited By ~ 39

Author(s):

H. H. Mueller ◽

D. Wörle ◽

M. Schulz

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Coulomb Energy

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Single-electron counting statistics of shot noise in nanowire Si metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3589373 ◽

2011 ◽

Vol 98 (19) ◽

pp. 193502 ◽

Cited By ~ 10

Author(s):

Katsuhiko Nishiguchi ◽

Yukinori Ono ◽

Akira Fujiwara

Keyword(s):

Metal Oxide ◽

Shot Noise ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Electron Counting ◽

Counting Statistics

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Conductance modulation of submicrometer metal–oxide–semiconductor field-effect transistors by single-electron trapping

Journal of Applied Physics ◽

10.1063/1.361785 ◽

1996 ◽

Vol 79 (8) ◽

pp. 4178 ◽

Cited By ~ 42

Author(s):

H. H. Mueller ◽

M. Schulz

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Electron Trapping ◽

Conductance Modulation

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Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.3257 ◽

1998 ◽

Vol 37 (Part 1, No. 6A) ◽

pp. 3257-3263 ◽

Cited By ~ 29

Author(s):

Akira Fujiwara ◽

Yasuo Takahashi ◽

Hideo Namatsu ◽

Kenji Kurihara ◽

Katsumi Murase

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Transistors ◽

Electron Transistors

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Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Nanotechnology ◽

10.1088/0957-4484/20/6/065202 ◽

2009 ◽

Vol 20 (6) ◽

pp. 065202 ◽

Cited By ~ 5

Author(s):

W Lee ◽

P Su

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Single Electron ◽

Oxide Semiconductor ◽

Electron Effects

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Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3595683 ◽

2011 ◽

Vol 98 (22) ◽

pp. 222104 ◽

Cited By ~ 28

Author(s):

Gento Yamahata ◽

Katsuhiko Nishiguchi ◽

Akira Fujiwara

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Accuracy Evaluation ◽

Electron Shuttle ◽

Si Nanowire

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2054 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2054-2057 ◽

Cited By ~ 21

Author(s):

Syunichi Watabe ◽

Shigetoshi Sugawa ◽

Akinobu Teramoto ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Evaluation Method ◽

Statistical Evaluation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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