Excited states of shallow acceptors confined in GaAs/AlxGa1−xAs quantum wells

1993 ◽  
Vol 48 (12) ◽  
pp. 8872-8877 ◽  
Author(s):  
P. O. Holtz ◽  
Q. X. Zhao ◽  
A. C. Ferreira ◽  
B. Monemar ◽  
M. Sundaram ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excited States ◽  
Shallow Acceptors

Intersubband Transitions in In0.07Ga0.93As/Al0.4Ga0.6As Multiple Quantum Wells

1994 ◽  
Vol 299 ◽  
Author(s):  
F. Szmulowicz ◽  
M. O. Manasreh ◽  
C. Kutsche ◽  
C. E. Stutz
Keyword(s):  
Energy Level ◽  
Quantum Well ◽  
Quantum Wells ◽  
Excited States ◽  
Fermi Energy ◽  
Multiple Quantum Well ◽  
Energy Separation ◽  
Multiple Quantum ◽  
Fermi Energy Level ◽  
Intersubband Transitions

AbstractIntersubband transitions in a series of well-doped ([Si] = 2.0×1018cm−3) In0.07Ga0.93As/Al0.4Ga0.6As multiple quantum well samples were studied as a function of the well width by using the optical absorption technique. A single intersubband transition is observed in samples in which the Fermi energy level is between the ground and the first excited states in the quantum well. On the other hand, two intersubband transitions were recorded in samples where the Fermi energy level lies between the first and the second excited states. These two intersubband transitions were attributed to ground-to-first excited states and first-to-second excited states transitions. The energy separation between the latter two intersubband transitions was found to increase as the well width is increased. The fact that two intersubband transitions were observed in certain samples may suggest that specially designed quantum wells can be used for two color long wavelength infrared detectors.

Electronic Structures of Shallow Acceptors Confined in Si/SiGe Quantum Well Structures

1999 ◽  
Vol 607 ◽  
Author(s):  
Q.X. Zhao ◽  
M. Willander
Keyword(s):  
Quantum Wells ◽  
Energy Levels ◽  
Binding Energies ◽  
Dielectric Constants ◽  
Recent Experimental Data ◽  
Quantum Well Structures ◽  
Barrier Materials ◽  
Boron Doped ◽  
Shallow Acceptors ◽  
Band Mixing

AbstractEnergy levels of the shallow acceptor states have been calculated for center-doped Si/Si1−xGex/Si quantum wells (QWs). The impurity states were calculated using an effective-mass theory that accounts for valence-band mixing as well as the mismatch of band parameters and dielectric constants between well and barrier materials. Acceptor binding energies and splitting between the acceptor 1S3/2(Γ7) and 1S3/2(Γ6) ground states were studied at various Ge concentrations and well widths. The results are discussed in comparison with the recent experimental data from the lateral transport measurements in boron-doped Si/SiGe quantum wells.

Photoluminescence Properties Affected by Carrier Transport between X and Different First Excited States Originating from Interface Imperfection in GaAs/AlAs Multi-Quantum Wells

2008 ◽  
Vol 47 (1) ◽  
pp. 682-684
Author(s):  
Hiroyuki Endo ◽  
Shingo Hiratsuka ◽  
Hiroshi Kitamura ◽  
Toshinari Takamatsu ◽  
Makoto Hosoda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excited States ◽  
Carrier Transport ◽  
Photoluminescence Properties

Shallow acceptors in strained Ge/Ge1−x Six heterostructures with quantum wells

2000 ◽  
Vol 34 (5) ◽  
pp. 563-567 ◽  
Author(s):  
V. Ya. Aleshkin ◽  
B. A. Andreev ◽  
V. I. Gavrilenko ◽  
I. V. Erofeeva ◽  
D. V. Kozlov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Shallow Acceptors

Excited states of the negatively charged exciton X−in wide CdTe/CdZnTe quantum wells

1998 ◽  
Vol 24 (4) ◽  
pp. 249-253 ◽  
Author(s):  
K. Kheng ◽  
R.T. Cox ◽  
L. Gauthier ◽  
K. Saminadayar ◽  
T. Baron
Keyword(s):  
Quantum Wells ◽  
Excited States ◽  
Charged Exciton
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