Photoluminescence Properties Affected by Carrier Transport between X and Different First Excited States Originating from Interface Imperfection in GaAs/AlAs Multi-Quantum Wells

2008 ◽  
Vol 47 (1) ◽  
pp. 682-684
Author(s):  
Hiroyuki Endo ◽  
Shingo Hiratsuka ◽  
Hiroshi Kitamura ◽  
Toshinari Takamatsu ◽  
Makoto Hosoda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excited States ◽  
Carrier Transport ◽  
Photoluminescence Properties

1.55 μm High Speed Partly Gain-Coupled DFB Lasers with Periodically Etched Strained-Layer Quantum Wells

1997 ◽  
Vol 08 (03) ◽  
pp. 475-494 ◽  
Author(s):  
Toshihiko Makino
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Carrier Transport ◽  
Stop Band ◽  
Longitudinal Distribution ◽  
Modulation Bandwidth ◽  
Carrier Injection ◽  
Strained Layer ◽  
High Modulation ◽  
Dfb Laser

The high speed performance of partly gain-coupled (GC) DFB lasers consisting of periodically etched strained-layer quantum wells (QW's) is reviewed with comparisons to the equivalent index-coupled (IC) DFB lasers with the same active layers. It is shown that the GC DFB laser has a –3 dB modulation bandwidth of 22 GHz at 10 mW with a stable single mode oscillation at the longer side of the Bragg Stop-band due to in-phase gain coupling. A theoretical analysis is also presented based on the local-normal-mode transfer-matrix laser model which takes into account both the longitudinal distribution of laser parameters and carrier transport effects. The mechanism for high modulation bandwidth of the GC DFB laser is attributed to a higher differential gain due to a reduced carrier transport time which is provided by an effecient carrier injection from the longitudinal etched interface of the QW's.

Photoluminescent Cu(i) vs. Ag(i) complexes: slowing down emission in Cu(i) complexes by pentacoordinate low-lying excited states

2019 ◽  
Vol 48 (26) ◽  
pp. 9765-9775 ◽  
Author(s):  
José M. Carbonell-Vilar ◽  
Elisa Fresta ◽  
Donatella Armentano ◽  
Rubén D. Costa ◽  
Marta Viciano-Chumillas ◽  
...  
Keyword(s):  
Solid State ◽  
Excited States ◽  
Photoluminescence Properties ◽  
Slowing Down

Replacement of copper(i) ions by silver(i) improves the solid-state photoluminescence properties.

scholarly journals InGaN quantum wells with improved photoluminescence properties through strain-controlled modification of the InGaN underlayer

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB28 ◽  
Author(s):  
Susumu Kusanagi ◽  
Yuya Kanitani ◽  
Yoshihiro Kudo ◽  
Kunihiko Tasai ◽  
Atsushi A. Yamaguchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Properties ◽  
Ingan Quantum Wells

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

2016 ◽  
Vol 25 (11) ◽  
pp. 117803 ◽  
Author(s):  
Haiyan Wu ◽  
Ziguang Ma ◽  
Yang Jiang ◽  
Lu Wang ◽  
Haojun Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Direct Observation ◽  
Transport Process ◽  
Carrier Transport ◽  
Pn Junction ◽  
Ingan Quantum Wells
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