Excited states of the negatively charged exciton X−in wide CdTe/CdZnTe quantum wells

1998 ◽  
Vol 24 (4) ◽  
pp. 249-253 ◽  
Author(s):  
K. Kheng ◽  
R.T. Cox ◽  
L. Gauthier ◽  
K. Saminadayar ◽  
T. Baron
Keyword(s):  
Quantum Wells ◽  
Excited States ◽  
Charged Exciton

Intersubband Transitions in In0.07Ga0.93As/Al0.4Ga0.6As Multiple Quantum Wells

1994 ◽  
Vol 299 ◽  
Author(s):  
F. Szmulowicz ◽  
M. O. Manasreh ◽  
C. Kutsche ◽  
C. E. Stutz
Keyword(s):  
Energy Level ◽  
Quantum Well ◽  
Quantum Wells ◽  
Excited States ◽  
Fermi Energy ◽  
Multiple Quantum Well ◽  
Energy Separation ◽  
Multiple Quantum ◽  
Fermi Energy Level ◽  
Intersubband Transitions

AbstractIntersubband transitions in a series of well-doped ([Si] = 2.0×1018cm−3) In0.07Ga0.93As/Al0.4Ga0.6As multiple quantum well samples were studied as a function of the well width by using the optical absorption technique. A single intersubband transition is observed in samples in which the Fermi energy level is between the ground and the first excited states in the quantum well. On the other hand, two intersubband transitions were recorded in samples where the Fermi energy level lies between the first and the second excited states. These two intersubband transitions were attributed to ground-to-first excited states and first-to-second excited states transitions. The energy separation between the latter two intersubband transitions was found to increase as the well width is increased. The fact that two intersubband transitions were observed in certain samples may suggest that specially designed quantum wells can be used for two color long wavelength infrared detectors.

Photoluminescence Properties Affected by Carrier Transport between X and Different First Excited States Originating from Interface Imperfection in GaAs/AlAs Multi-Quantum Wells

2008 ◽  
Vol 47 (1) ◽  
pp. 682-684
Author(s):  
Hiroyuki Endo ◽  
Shingo Hiratsuka ◽  
Hiroshi Kitamura ◽  
Toshinari Takamatsu ◽  
Makoto Hosoda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excited States ◽  
Carrier Transport ◽  
Photoluminescence Properties

ON THE MATSUBARA-TOYOZAWA FORMALISM TO TREAT IMPURITY BANDS IN δ-DOPED QUANTUM WELLS

1992 ◽  
Vol 06 (03) ◽  
pp. 171-176
Author(s):  
I.C. DA CUNHA LIMA ◽  
A. FERREIRA DA SILVA
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Excited States ◽  
Ground State ◽  
Shallow Donors ◽  
Impurity Bands

We obtain the density of the ground and excited states for electrons bound to shallow donors in a δ-dopping of a quantum well. We use the Matsubara-Toyozawa technique to treat disorder. The impurity bands are calculated for a concentration of 9.4×109 cm −2. We show that for this concentration of interest the excited bands do not overlap the ground state.

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