Effective bond-orbital model for shallow acceptors in GaAs-AlxGa1−xAs quantum wells and superlattices

1990 ◽  
Vol 41 (3) ◽  
pp. 1447-1460 ◽  
Author(s):  
G. T. Einevoll ◽  
Yia-Chung Chang
Keyword(s):  
Quantum Wells ◽  
Shallow Acceptors

Electronic Structures of Shallow Acceptors Confined in Si/SiGe Quantum Well Structures

1999 ◽  
Vol 607 ◽  
Author(s):  
Q.X. Zhao ◽  
M. Willander
Keyword(s):  
Quantum Wells ◽  
Energy Levels ◽  
Binding Energies ◽  
Dielectric Constants ◽  
Recent Experimental Data ◽  
Quantum Well Structures ◽  
Barrier Materials ◽  
Boron Doped ◽  
Shallow Acceptors ◽  
Band Mixing

AbstractEnergy levels of the shallow acceptor states have been calculated for center-doped Si/Si1−xGex/Si quantum wells (QWs). The impurity states were calculated using an effective-mass theory that accounts for valence-band mixing as well as the mismatch of band parameters and dielectric constants between well and barrier materials. Acceptor binding energies and splitting between the acceptor 1S3/2(Γ7) and 1S3/2(Γ6) ground states were studied at various Ge concentrations and well widths. The results are discussed in comparison with the recent experimental data from the lateral transport measurements in boron-doped Si/SiGe quantum wells.

Shallow acceptors in strained Ge/Ge1−x Six heterostructures with quantum wells

2000 ◽  
Vol 34 (5) ◽  
pp. 563-567 ◽  
Author(s):  
V. Ya. Aleshkin ◽  
B. A. Andreev ◽  
V. I. Gavrilenko ◽  
I. V. Erofeeva ◽  
D. V. Kozlov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Shallow Acceptors

Shallow acceptors in Ge/GeSi strained multilayer heterostructures with quantum wells

JETP Letters ◽  
1997 ◽  
Vol 65 (2) ◽  
pp. 209-214 ◽  
Author(s):  
V. I. Gavrilenko ◽  
I. V. Erofeeva ◽  
A. L. Korotkov ◽  
Z. F. Krasil’nik ◽  
O. A. Kuznetsov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multilayer Heterostructures ◽  
Shallow Acceptors

Excited states of shallow acceptors confined in GaAs/AlxGa1−xAs quantum wells

1993 ◽  
Vol 48 (12) ◽  
pp. 8872-8877 ◽  
Author(s):  
P. O. Holtz ◽  
Q. X. Zhao ◽  
A. C. Ferreira ◽  
B. Monemar ◽  
M. Sundaram ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excited States ◽  
Shallow Acceptors

Binding energy of shallow acceptors inInxGa1−xAsGaAsstrained quantum wells

1988 ◽  
Vol 38 (11) ◽  
pp. 7877-7880 ◽  
Author(s):  
A. P. Roth ◽  
D. Morris ◽  
R. A. Masut ◽  
C. Lacelle ◽  
J. A. Jackman
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Shallow Acceptors

Effects of localization on optical spectra for shallow acceptors in center-doped GaAs/AlGaAs multiple quantum wells

1992 ◽  
Vol 263 (1-3) ◽  
pp. 556-560 ◽  
Author(s):  
B. Monemar ◽  
P.O. Holtz ◽  
P. Bergman ◽  
C.I. Harris ◽  
H. Kalt ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Spectra ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Shallow Acceptors

Hole transport due to shallow acceptors along boron doped SiGe quantum wells

2000 ◽  
Vol 380 (1-2) ◽  
pp. 218-220 ◽  
Author(s):  
I.V Altukhov ◽  
M.S Kagan ◽  
V.P Sinis ◽  
S.G Thomas ◽  
K.L Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hole Transport ◽  
Boron Doped ◽  
Shallow Acceptors ◽  
Sige Quantum Wells

Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells

1993 ◽  
Vol 143-147 ◽  
pp. 657-662
Author(s):  
P.O. Holtz ◽  
Q.X. Zhao ◽  
Bo Monemar ◽  
M. Sundaram ◽  
J.L. Merz ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Quantum Wells ◽  
Confinement Effects ◽  
Shallow Acceptors

Spatially selective excitation of shallow acceptors in GaAs/AlxGa1−xAs quantum wells

1990 ◽  
Vol 7 (2) ◽  
pp. 81-87 ◽  
Author(s):  
G.C. Rune ◽  
P.O. Holtz ◽  
B. Monemar ◽  
M. Sundaram ◽  
J.L. Merz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Selective Excitation ◽  
Shallow Acceptors
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