Binding energies of ground and excited states of shallow acceptors in GaAs/Ga1−xAlxAs quantum wells

1990 ◽  
Vol 42 (8) ◽  
pp. 5349-5352 ◽  
Author(s):  
Samuele Fraizzoli ◽  
Alfredo Pasquarello
Keyword(s):  
Quantum Wells ◽  
Excited States ◽  
Binding Energies ◽  
Shallow Acceptors

Electronic Structures of Shallow Acceptors Confined in Si/SiGe Quantum Well Structures

1999 ◽  
Vol 607 ◽  
Author(s):  
Q.X. Zhao ◽  
M. Willander
Keyword(s):  
Quantum Wells ◽  
Energy Levels ◽  
Binding Energies ◽  
Dielectric Constants ◽  
Recent Experimental Data ◽  
Quantum Well Structures ◽  
Barrier Materials ◽  
Boron Doped ◽  
Shallow Acceptors ◽  
Band Mixing

AbstractEnergy levels of the shallow acceptor states have been calculated for center-doped Si/Si1−xGex/Si quantum wells (QWs). The impurity states were calculated using an effective-mass theory that accounts for valence-band mixing as well as the mismatch of band parameters and dielectric constants between well and barrier materials. Acceptor binding energies and splitting between the acceptor 1S3/2(Γ7) and 1S3/2(Γ6) ground states were studied at various Ge concentrations and well widths. The results are discussed in comparison with the recent experimental data from the lateral transport measurements in boron-doped Si/SiGe quantum wells.

Excited states of shallow acceptors confined in GaAs/AlxGa1−xAs quantum wells

1993 ◽  
Vol 48 (12) ◽  
pp. 8872-8877 ◽  
Author(s):  
P. O. Holtz ◽  
Q. X. Zhao ◽  
A. C. Ferreira ◽  
B. Monemar ◽  
M. Sundaram ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excited States ◽  
Shallow Acceptors

Effects of Confinement on the Optical Properties of a Shallow Acceptor and its Bound Exciton in Narrow GaAs/AIGaAs Quantum Wells

1989 ◽  
Vol 163 ◽  
Author(s):  
P.O. Holtzv ◽  
M. Sundaram ◽  
G.C. Rune ◽  
B. Monemar ◽  
J.L. Merz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excited States ◽  
Transition Energy ◽  
Bulk Material ◽  
Binding Energies ◽  
Spectroscopic Techniques ◽  
Shallow Acceptor ◽  
Theoretical Predictions ◽  
Resonant Raman ◽  
Resonant Raman Scattering

AbstractTransitions from the 1s ground state to 2s excited states of the Be-acceptor confined in GaAs/AIGaAs quantum wells (QWs) have been observed via two independent spectroscopic techniques: Two-hole transitions of the bound exciton (BE) measured in selective photoluminescence and Resonant Raman Scattering. The dependence of the 1s - 2s transition energy on the QW thickness (50 Å < Lz < 140 Å) has been studied for the case of acceptors in the center of the QW. The experimentally determined 1s - 2s transition energies have then been added to recently calculated binding energies for the 2s excited state in order to obtain the total binding energies for the acceptor at different confinements. The derived binding energies are finally compared with theoretical predictions. The same kind of measurements have been performed for a QW with a given thickness, but in which the position of the acceptor has been varied from the center to the edge of the QW.The dependencies of the binding energies of the exciton bound to the investigated acceptor on the QW thickness and the position of the acceptor in the QW have also been studied. For the case of varying QW thickness, an almost linear relationship between the binding energies of the BE and the acceptor binding the exciton is found. This fact implies that a correspondence to Haynes' rule in bulk material could be applied to these QW systems, but in this case for the same acceptor at different binding energies due to the effect of varying confinement.

scholarly journals Anisotropic 2D excitons unveiled in organic–inorganic quantum wells

2021 ◽  
Author(s):  
Lorenzo Maserati ◽  
Sivan Refaely-Abramson ◽  
Christoph Kastl ◽  
Christopher T. Chen ◽  
Nicholas J. Borys ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Crystalline Polymer ◽  
Binding Energies ◽  
Two Dimensional ◽  
Metal Chalcogenide

Hybrid layered metal chalcogenide crystalline polymer hosts strongly anisotropic two-dimensional excitons with large binding energies.

Exciton binding energies in CdTe/Cd1−xMnxTe multiple quantum wells

1992 ◽  
Vol 12 (4) ◽  
pp. 447-451 ◽  
Author(s):  
S.R. Jackson ◽  
J.E. Nicholls ◽  
W.E. Hagston ◽  
T.J. Gregory ◽  
P. Harrison ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Binding Energies ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

scholarly journals Universality of excited three-body bound states in one dimension

2021 ◽  
Author(s):  
Lucas Happ ◽  
Matthias Zimmermann ◽  
Maxim A Efremov
Keyword(s):  
Excited States ◽  
Bound States ◽  
Space Dimension ◽  
Binding Energies ◽  
Wave Functions ◽  
One Dimension ◽  
Strong Indication ◽  
Body System ◽  
Weakly Bound ◽  
Three Body

Abstract We study a heavy-heavy-light three-body system confined to one space dimension in the regime where an excited state in the heavy-light subsystems becomes weakly bound. The associated two-body system is characterized by (i) the structure of the weakly-bound excited heavy-light state and (ii) the presence of deeply-bound heavy-light states. The consequences of these aspects for the behavior of the three-body system are analyzed. We find a strong indication for universal behavior of both three-body binding energies and wave functions for different weakly-bound excited states in the heavy-light subsystems.

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