Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111)B-grown (In,Ga)As/GaAs multiple quantum wells

1993 ◽  
Vol 48 (11) ◽  
pp. 8491-8494 ◽  
Author(s):  
R. A. Hogg ◽  
T. A. Fisher ◽  
A. R. K. Willcox ◽  
D. M. Whittaker ◽  
M. S. Skolnick ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Oscillator Strengths ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Transition Energies ◽  
Field Effects ◽  
Piezoelectric Field

Growth and Characterization of InAsxP1−x/InP Strained Multiple Quantum Wells by Gas Source Molecular Beam Expitaxy

1996 ◽  
Vol 450 ◽  
Author(s):  
H. C. Kuo ◽  
S. Thomas ◽  
A. P. Curtis ◽  
G. E. Stillman ◽  
C. H. Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Interband Transition ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Double Crystal ◽  
Cross Sectional ◽  
Transition Energies ◽  
Gas Source

AbstractInAsxPi.x/InP (10 period 50/100Å with x=0.25–0.79) pseudomorphically strained multiple quantum wells (SMQWs) were grown by gas source molecular beam expitaxy (GSMBE) at 470°C and characterized by cross-sectional transmission electron microscope (XTEM), double crystal x-ray diffraction (DCXRD), and optical spectroscopy. The structural analysis demonstrates that excellent control of the sharp interface and limited As-P interdiffusion can be achieved by GSMBE growth. XTEM images of these SMQWs display no misfit dislocations, and DCXRD scans reveal high order superlattice satellite peaks. Photoluminescence (PL) and transmission measurements were performed for all SMQWs to evaluate crystal quality. Only slight degradation in luminescence was observed as the As composition increased. Based on the three-band Kane model which includes the lattice strain, the transition energies of SMQWs were calculated using the conduction-band offset (Qc=δEc/δEg) as an adjustable parameter. The best fit of measured and calculated interband transition energies suggests that Qc is independent of As composition and is 0.70±0.05. Finally, a growth kinetics model based on the Langmuir equation was derived to realize the As/P incorporation ratio in the InAsP materials. Theoretical results show good agreement with experimental data.

scholarly journals Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells

2001 ◽  
Vol 78 (7) ◽  
pp. 928-930 ◽  
Author(s):  
Yin-Chieh Huang ◽  
Jian-Chin Liang ◽  
Chi-Kuang Sun ◽  
Amber Abare ◽  
Steven P. DenBaars
Keyword(s):  
Diffusion Coefficient ◽  
Quantum Wells ◽  
Ambipolar Diffusion ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Piezoelectric Field

Effects of Patterned Sapphire Substrates on Piezoelectric Field in Blue-Emitting InGaN Multiple Quantum Wells

2010 ◽  
Vol 31 (8) ◽  
pp. 842-844 ◽  
Author(s):  
Sang-Mook Kim ◽  
Hwa Sub Oh ◽  
Jong Hyeob Baek ◽  
Kwang-Ho Lee ◽  
Gun Young Jung ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Sapphire Substrates ◽  
Piezoelectric Field ◽  
Patterned Sapphire Substrates
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