scholarly journals Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells

2001 ◽  
Vol 78 (7) ◽  
pp. 928-930 ◽  
Author(s):  
Yin-Chieh Huang ◽  
Jian-Chin Liang ◽  
Chi-Kuang Sun ◽  
Amber Abare ◽  
Steven P. DenBaars
Keyword(s):  
Diffusion Coefficient ◽  
Quantum Wells ◽  
Ambipolar Diffusion ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Piezoelectric Field

Effects of Patterned Sapphire Substrates on Piezoelectric Field in Blue-Emitting InGaN Multiple Quantum Wells

2010 ◽  
Vol 31 (8) ◽  
pp. 842-844 ◽  
Author(s):  
Sang-Mook Kim ◽  
Hwa Sub Oh ◽  
Jong Hyeob Baek ◽  
Kwang-Ho Lee ◽  
Gun Young Jung ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Sapphire Substrates ◽  
Piezoelectric Field ◽  
Patterned Sapphire Substrates

Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

1998 ◽  
Vol 537 ◽  
Author(s):  
H. S. Kim ◽  
Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Peak Position ◽  
Multiple Quantum Wells ◽  
Collective Effects ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Delay Times ◽  
Piezoelectric Effects ◽  
Piezoelectric Field ◽  
Time Resolved Photoluminescence

AbstractPiezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al0.15Ga0.85N MQWs.

scholarly journals Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

1999 ◽  
Vol 4 (S1) ◽  
pp. 130-135
Author(s):  
H. S. Kim ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Peak Position ◽  
Multiple Quantum Wells ◽  
Collective Effects ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Delay Times ◽  
Piezoelectric Effects ◽  
Piezoelectric Field ◽  
Time Resolved Photoluminescence

Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al0.15Ga0.85N MQWs.

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