scholarly journals Polarization field effects on the electron-hole recombination dynamics in In0.2Ga0.8N/In1−xGaxN multiple quantum wells

1997 ◽  
Vol 71 (21) ◽  
pp. 3135-3137 ◽  
Author(s):  
Marco Buongiorno Nardelli ◽  
Krzysztof Rapcewicz ◽  
J. Bernholc
Keyword(s):  
Quantum Wells ◽  
Polarization Field ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Electron Hole ◽  
Field Effects ◽  
Hole Recombination ◽  
Recombination Dynamics

Study of Near-Threshold Gain Mechanisms in MOCVD-Grown GaN Epilayers and InGaN/GaN Heterostructures

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Bidnyk ◽  
T. J. Schmidt ◽  
B. D. Little ◽  
J. J. Song
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Electron Hole ◽  
Electron Hole Plasma ◽  
Narrow Emission ◽  
Threshold Gain ◽  
Near Threshold

ABSTRACTWe report the results of an experimental study on near-threshold gain mechanisms in optically pumped GaN epilayers and InGaN/GaN heterostructures at temperatures as high as 700 K. We show that the dominant near-threshold gain mechanism in GaN epilayers is inelastic excitonexciton scattering for temperatures below ∼ 150 K, characterized by band-filling phenomena and a relatively low stimulated emission (SE) threshold. An analysis of both the temperature dependence of the SE threshold and the relative shift between stimulated and band-edge related emission indicates electron-hole plasma is the dominant gain mechanism for temperatures exceeding 150 K. The dominant mechanism for SE in InGaN epilayers and InGaN/GaN multiple quantum wells was found to be the recombination of carriers localized at potential fluctuations resulting from nonuniform indium incorporation. The SE spectra from InGaN epilayers and multiple quantum wells were comprised of extremely narrow emission lines and no spectral broadening of the lines was observed as the temperature was raised from 10 K to over 550 K. Based on the presented results, we suggest a method for significantly reducing the carrier densities needed to achieve population inversion in GaN, allowing for the development of GaNactive-medium laser diodes.

Polarization field effects on the recombination dynamics in low-In-content InGaN multi-quantum wells

2004 ◽  
Vol 36 (4-6) ◽  
pp. 615-624 ◽  
Author(s):  
N. Armani ◽  
F. Rossi ◽  
C. Ferrari ◽  
L. Lazzarini ◽  
A. Vinattieri ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Polarization Field ◽  
Field Effects ◽  
Recombination Dynamics

Optical properties and recombination dynamics of InGaN/GaN multiple quantum wells with Si-doped barriers

2001 ◽  
Vol 118 (11) ◽  
pp. 547-551 ◽  
Author(s):  
Mee-Yi Ryu ◽  
Phil Won Yu ◽  
Eunsoon Oh ◽  
Chulsoo Sone ◽  
Okhyun Nam ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Si Doped ◽  
Recombination Dynamics

Electron–hole superlattices in GaAs/AlxGa1−xAs multiple quantum wells

2006 ◽  
Vol 86 (23) ◽  
pp. 3581-3593 ◽  
Author(s):  
K. P. Walsh ◽  
A. T. Fiory ◽  
N. M. Ravindra ◽  
D. R. Harshman ◽  
J. D. Dow
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Electron Hole

scholarly journals The polarization field in Al-rich AlGaN multiple quantum wells

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCC10 ◽  
Author(s):  
Qiang Guo ◽  
Ronny Kirste ◽  
Seiji Mita ◽  
James Tweedie ◽  
Pramod Reddy ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Polarization Field ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

scholarly journals Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD

2016 ◽  
Vol 11 (1) ◽  
Author(s):  
Feng Zhang ◽  
Masao Ikeda ◽  
Shu-Ming Zhang ◽  
Jian-Ping Liu ◽  
Ai-Qin Tian ◽  
...  
Keyword(s):  
Field Strength ◽  
Quantum Wells ◽  
Polarization Field ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

scholarly journals Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence

2017 ◽  
Vol 7 (3) ◽  
pp. 817-821 ◽  
Author(s):  
Kan-Hua Lee ◽  
Keith W. J. Barnham ◽  
John S. Roberts ◽  
Diego Alonso-Alvarez ◽  
N. P. Hylton ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Recombination ◽  
Recombination Dynamics

Indirect barrier electron-hole gas transitions in mixed type-I–type-II GaAs/AlAs multiple quantum wells

2001 ◽  
Vol 64 (3) ◽  
Author(s):  
R. Guliamov ◽  
E. Lifshitz ◽  
E. Cohen ◽  
Arza Ron ◽  
L. N. Pfeiffer
Keyword(s):  
Quantum Wells ◽  
Mixed Type ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Type Ii ◽  
Electron Hole
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